Datasheet > SS9011GJ18Z

SS9011GJ18Z

更新时间： 2024-11-16 06:13:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
3页	64K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

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SS9011GJ18Z 数据手册

SS9011

NPN EPITAXIAL SILICON TRANSISTOR

AM CONVERTER, AM/FM IF AMPLIFIER

GENERAL PURPOSE TRANSISTOR

TO-92

ABSOLUTE MAXIMUM RATINGS (T_A=25°C)

Characteristic

Symbol

Rating

Unit

°C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

V_CBO

400

V_CEO

V_EBO

I_C

P_C

T_J

150

-55 ~ 150

T_STG

1. Emitter 2. Base 3. Collector

ELECTRICAL CHARACTERISTICS (T_A=25°C)

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

I_C= 100mA, I_E=0

I_C=1mA, I_B=0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Output Capacitance

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_EBO

h_FE

V_CE(sat)

V_BE

C_OB

I_E= 100mA, I_C=0

V_CB= 50V, I_E=0

V_EB= 5V, I_C=0

V_CE= 5V, I_C= 1mA

I_C= 10mA, I_B= 1mA

V_CE= 5V, I_C= 1mA

V_CB= 10V, I_E= 0

f = 1MHz

100

198

0.3

0.08

0.7

0.75

0.65

1.5

V_CE= 5V, I_C= 1mA

V_CE= 5V, I_C= 1.0 mA

f=1MHz, R_S= 500W

MHz

f_T

370

2.0

Current Gain-Bandwidth Product

Noise Figure

150

4.0

h_FECLASSIFICATION

Classification

h_FE

28-45

39-60

54-80

72-108 97-146 132-198

Rev. B

ã 1999 Fairchild Semiconductor Corporation

12 3

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