Datasheet > SS9012D75Z

SS9012D75Z

更新时间： 2024-11-16 06:13:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	58K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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SS9012D75Z 数据手册

SS9012

1W Output Amplifier of Potable Radios in

Class B Push-pull Operation.

•

High total power dissipation. (P =625mW)

High Collector Current. (I = -500mA)

Complementary to SS9013

Excellent h linearity.

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings _{T =25°C unless otherwise notedꢀ}

Symbol

Parameter

Ratings

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-20

CEO

EBO

-5

-500

625

Collector Dissipation

Junction Temperature

Storage Temperature

150

°C

-55 ~ 150

STG

Electrical Characteristics _{T =25°C unless otherwise notedꢀ}

Symbol

Parameter

Test Condition

Min.

-40

-20

-5

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

= -100µA, I =0

CBO

CEO

EBO

= -1mA, I =0

= -100µA, I =0

= -25V, I =0

-100

202

CBO

EBO

Emitter Cut-off Current

= -3V, I =0

DC Current Gain

= -1V, I = -50mA

120

FE1

FE2

= -1V, I = -500mA

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

= -500mA, I = -50mA

-0.18

-0.95

-0.67

-0.6

-1.2

-0.7

= -500mA, I = -50mA

= -1V, I = -10mA

-0.6

Classification

64 ~ 91

78 ~ 112

96 ~ 135

112 ~ 166

144 ~ 202

FE1

Rev. A, February 2000

12 3 4

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