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SS8P6C PDF预览

SS8P6C

更新时间: 2024-11-15 06:14:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 111K
描述
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier

SS8P6C 数据手册

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New Product  
SS8P5C & SS8P6C  
Vishay General Semiconductor  
High Current Density Surface Mount  
Dual Common-Cathode Schottky Rectifier  
FEATURES  
• Very low profile - typical height of 1.1 mm  
eSMPTM Series  
• Ideal for automated placement  
• Low forward voltage drop, low power  
losses  
K
• High efficiency  
1
• Low thermal resistance  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
2
TO-277A (SMPC)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Anode 1  
K
Cathode  
Anode 2  
Halogen-free  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
Molding compound meets UL 94V-0 flammability  
rating.  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC-Q101 qualified)  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 4.0 A  
50 V, 60 V  
120 A  
VRRM  
IFSM  
EAS  
20 mJ  
V
F at IF = 4 A  
TJ max.  
0.56 V  
Base P/N-M3 - halogen-free and RoHS compliant,  
commercial grade  
150 °C  
Base P/NHM3 - halogen-free and RoHS compliant,  
high reliability/automotive grade (AEC-Q101 qualified)  
TYPICAL APPLICATIONS  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 and M3 suffix meets JESD 201 class 1A whisker  
test, HE3 and HM3 suffix meets JESD 201 class 2  
whisker test  
For use in high frequency rectifier of switching mode  
power supplies, freewheeling diodes, dc-to-dc  
converters and polarity protection application.  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SS8P5C  
S85C  
50  
SS8P6C  
S86C  
60  
UNIT  
Device marking code  
VRRM  
IF(AV)  
Maximum repetitive peak reverse voltage  
V
A
total device  
Maximum average forward rectified current (Fig. 1)  
per diode  
8.0  
4.0  
Peak forward surge current 10 ms single half sine-wave superimposed  
on rated load per diode  
IFSM  
120  
20  
A
EAS  
J, TSTG  
Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode  
Operating junction and storage temperature range  
mJ  
°C  
T
- 55 to + 150  
Document Number: 89028  
Revision: 30-Jul-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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