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SS8PH10_15 PDF预览

SS8PH10_15

更新时间: 2024-11-16 01:26:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 96K
描述
High Current Density Surface Mount

SS8PH10_15 数据手册

 浏览型号SS8PH10_15的Datasheet PDF文件第2页浏览型号SS8PH10_15的Datasheet PDF文件第3页浏览型号SS8PH10_15的Datasheet PDF文件第4页浏览型号SS8PH10_15的Datasheet PDF文件第5页浏览型号SS8PH10_15的Datasheet PDF文件第6页 
SS8PH9, SS8PH10  
Vishay General Semiconductor  
www.vishay.com  
High Current Density Surface Mount  
High Voltage Schottky Rectifier  
FEATURES  
eSMP® Series  
Available  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• High barrier technology, TJ = 175 °C maximum  
• Low leakage current  
K
1
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
2
• AEC-Q101 qualified  
TO-277A (SMPC)  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Anode 1  
Anode 2  
K
Cathode  
TYPICAL APPLICATIONS  
For use in high frequency rectifier of switching mode power  
supplies, freewheeling diodes, DC/DC converters, or  
polarity protection application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
8.0 A  
VRRM  
90 V, 100 V  
150 A  
IFSM  
MECHANICAL DATA  
EAS  
20 mJ  
Case: TO-277A (SMPC)  
Molding compound meets UL 94 V-0 flammability rating  
VF at IF = 8.0 A  
IR  
0.720 V  
0.18 μA  
175 °C  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
TJ max.  
Package  
Diode variations  
commercial grade  
TO-277A  
Single  
Base P/NHM3  
- halogen-free, RoHS-compliant, and  
automotive grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix  
meets JESD 201 class 2 whisker test  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS8PH9  
8H9  
SS8PH10  
8H10  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (fig. 1)  
VRRM  
IF(AV)  
90  
100  
V
A
8.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
150  
A
Non-repetitive avalanche energy  
EAS  
20  
mJ  
°C  
at IAS = 2.0 A, TJ = 25 °C  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
Revision: 16-Jan-14  
Document Number: 88989  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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