Datasheet > SS8P3C_15

SS8P3C_15

更新时间： 2024-11-15 01:25:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	89K
描述
High Current Density Surface Mount Dual Common Cathode Schottky Rectifier

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数据手册

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SS8P3C_15 数据手册

SS8P3C, SS8P4C

Vishay General Semiconductor

www.vishay.com

High Current Density Surface Mount

Dual Common Cathode Schottky Rectifier

FEATURES

eSMP^®Series

Available

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

TO-277A (SMPC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Anode 1

Cathode

Anode 2

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, and

polarity protection application.

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 4.0 A

30 V, 40 V

120 A

MECHANICAL DATA

V_RRM

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

I_FSM

Base P/N-M3

halogen-free, RoHS-compliant, and

E_AS

20 mJ

commercial grade

V_Fat I_F= 4 A

T_Jmax.

0.42 V

Base P/NHM3

- halogen-free, RoHS-compliant and

AEC-Q101 qualified

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified 

(“_X” denotes revision code e.g. A, B,.....)

150 °C

TO-277A

Single

Package

Diode variations

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SS8P3C

S83C

SS8P4C

S84C

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

total device

Maximum average forward rectified current (fig. 1)

per diode

8.0

4.0

Peak forward surge current 10 ms single half sine-wave 

I_FSM

120

superimposed on rated load

Non-repetitive avalanche energy at 25 °C, I_AS= 2 A per diode

Operating junction and storage temperature range

E_AS

T_J, T_STG

-55 to +150

°C

Revision: 13-Jan-15

Document Number: 89029

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SS8P3C_15相关器件

型号	品牌	获取价格	描述	数据表
SS8P3C-E3/86A	VISHAY	获取价格	Rectifier Diode, Schottky, 4A, 30V V(RRM),
SS8P3C-E3/87A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-277A, ROHS COMP
SS8P3C-G3/86A	VISHAY	获取价格	DIODE 4 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier
SS8P3C-G3/87A	VISHAY	获取价格	DIODE 4 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier
SS8P3CHE3/86A	VISHAY	获取价格	Rectifier Diode, Schottky, 4A, 30V V(RRM),
SS8P3CHE3/87A	VISHAY	获取价格	Rectifier Diode, Schottky, 4A, 30V V(RRM),
SS8P3CHG3/87A	VISHAY	获取价格	DIODE 4 A, 30 V, SILICON, RECTIFIER DIODE, TO-277A, GREEN, PLASTIC, SMPC, 3 PIN, Rectifier
SS8P3CHM3_A/H	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-277A, HALOGEN F
SS8P3CHM3_A/I	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 30V V(RRM), Silicon, TO-277A, HALOGEN F
SS8P3CL	VISHAY	获取价格	High Current Density Surface Mount Schottky Barrier Rectifiers

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