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SS2003M-TL-E PDF预览

SS2003M-TL-E

更新时间: 2024-11-25 13:13:59
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管肖特基二极管
页数 文件大小 规格书
5页 188K
描述
Schottky Barrier Diode, 2.0 A, 30 V, SC 88FL / MCPH6, 3000-REEL

SS2003M-TL-E 技术参数

是否无铅: 不含铅生命周期:Not Recommended
包装说明:SC-88, SC-70, 6 PIN针数:6
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.34
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:R-PDSO-F6
JESD-609代码:e6湿度敏感等级:1
最大非重复峰值正向电流:10 A元件数量:1
相数:1端子数量:6
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:30 V最大反向电流:1250 µA
最大反向恢复时间:0.02 µs表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Bismuth (Sn/Bi)
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

SS2003M-TL-E 数据手册

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Ordering number : EN8345B  
SS2003M  
Schottky Barrier Diode  
30V, 2.0A, Low VF, Single MCPH6  
http://onsemi.com  
Applications  
High frequency rectication (switching regulators, converters, choppers)  
Halogen free compliance  
Features  
Small Switching noise  
Low forward voltage (I =2A, V max=0.40V)  
Small package permitting applied sets to be small and slim  
F
F
Specications  
at Ta=25 C  
Absolute Maximum Ratings  
°
Parameter  
Repetitive Peak Reverse Voltage  
Nonrepetitive Peak Reverse Surge Voltage  
Average Output Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
30  
30  
RRM  
V
V
RSM  
I
I
2.0  
A
O
Surge Forward Current  
50Hz sine wave, 1 cycle  
10  
A
FSM  
Junction Temperature  
Tj  
--55 to +125  
--55 to +125  
°C  
°C  
Storage Temperature  
Tstg  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Ordering & Package Information  
Package Dimensions  
unit : mm (typ)  
Device  
Package  
Shipping  
3,000  
memo  
7022A-014  
Pb-Free  
and  
Halogen Free  
MCPH6  
SS2003M-TL-W  
SC-88, SC-70-6, SOT-363 pcs./reel  
SS2003M-TL-W  
2.0  
0.15  
Packing Type : TL  
Marking  
6
5
4
3
0 to 0.02  
SF  
TL  
1
2
0.65  
0.3  
1 : Cathode  
2 : Cathode  
3 : Anode  
4 : No Contact  
5 : Cathode  
6 : Cathode  
Electrical Connection  
6
5
4
1
2
3
4
MCPH6  
6
5
1
2
3
Semiconductor Components Industries, LLC, 2013  
May, 2013  
52913 TKIM TC-00002896/O0312 TKIM/62005SB MSIM TB-00001370 No.8345-1/5  

SS2003M-TL-E 替代型号

型号 品牌 替代类型 描述 数据表
SS2003M-TL-W ONSEMI

类似代替

Schottky Barrier Diode 30V, 2.0A, Low VF, Single MCPH6
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Schottky Barrier Diode 30V, 2.0A Rectifier

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