5秒后页面跳转
SS2015KUA PDF预览

SS2015KUA

更新时间: 2024-09-17 01:08:55
品牌 Logo 应用领域
SECELECTRONICS /
页数 文件大小 规格书
6页 194K
描述
CMOS High Sensitivity Micropower Hall Latch

SS2015KUA 数据手册

 浏览型号SS2015KUA的Datasheet PDF文件第2页浏览型号SS2015KUA的Datasheet PDF文件第3页浏览型号SS2015KUA的Datasheet PDF文件第4页浏览型号SS2015KUA的Datasheet PDF文件第5页浏览型号SS2015KUA的Datasheet PDF文件第6页 
SS2015  
CMOS High Sensitivity Micropower Hall Latch  
Packages  
Features and Benefits  
1. Operation down to 4.5V  
2. Wide operating voltage range  
3. High sensitivity for direct reed switch re-  
placement applications  
4. Output switches with absolute  
value of North or South pole from magnet  
5. Temperature compensation  
6. Open-Collector pre-driver  
7. 60V maximum withstand voltage  
8. Reverse polarity protection  
9. Package: TO-92S(SIP)  
3 pin SIP (suffix UA)  
Functional Block Diagram  
Application Examples  
1. Brush-less DC Motor  
2. Brush-less DC Fan  
3. Revolution counting  
4. Speed measurement  
General Description:  
The SS2015 Hall effect latch sensor IC is fabricated from mixed signal CMOS technology. It incorporates ad-  
vanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.  
The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and  
analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a  
“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall  
element is evaluated against the predefined thresholds. If the flux density is above or below the BOP/BRP thresh-  
olds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output tran-  
sistor is latched in its previous state. The design has been optimized for service in applications requiring extended  
operating lifetime in battery powered systems. An internal bandgap regulator is used to provide temperature com-  
pensated supply voltage for internal circuits and allows a wide operating supply range.  
The output transistor of the SS2015 will be latched on (BOP) in the presence of a sufficiently strong South or  
North magnetic field facing the marked side of the package. The output will be latched off (BRP) in the absence  
of a magnetic field.  
1
V3.10 Nov 1, 2013  

与SS2015KUA相关器件

型号 品牌 获取价格 描述 数据表
SS2015LUA SECELECTRONICS

获取价格

CMOS High Sensitivity Micropower Hall Latch
SS2019 SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019ESOT SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019EUA SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019KSOT SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019KUA SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019LSOT SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS2019LUA SECELECTRONICS

获取价格

Hall Latch Position Sensor
SS201C-3Z-D3/V FUJI

获取价格

Transistor Output SSR, 1-Channel, 2000V Isolation
SS2020 SECOS

获取价格

20AMP Schottky Barrier Rectifiers