Datasheet > SS2015

SS2015

更新时间： 2024-11-07 01:08:55

品牌	Logo	应用领域
SECELECTRONICS		/
页数	文件大小	规格书
6页	194K
描述
CMOS High Sensitivity Micropower Hall Latch

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SS2015 数据手册

SS2015

CMOS High Sensitivity Micropower Hall Latch

Packages

Features and Benefits

1. Operation down to 4.5V

2. Wide operating voltage range

3. High sensitivity for direct reed switch re-

placement applications

4. Output switches with absolute

value of North or South pole from magnet

5. Temperature compensation

6. Open-Collector pre-driver

7. 60V maximum withstand voltage

8. Reverse polarity protection

9. Package: TO-92S(SIP)

3 pin SIP (suffix UA)

Functional Block Diagram

Application Examples

1. Brush-less DC Motor

2. Brush-less DC Fan

3. Revolution counting

4. Speed measurement

General Description:

The SS2015 Hall effect latch sensor IC is fabricated from mixed signal CMOS technology. It incorporates ad-

vanced chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and

analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a

“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall

element is evaluated against the predefined thresholds. If the flux density is above or below the B_OP/B_RPthresh-

olds then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output tran-

sistor is latched in its previous state. The design has been optimized for service in applications requiring extended

operating lifetime in battery powered systems. An internal bandgap regulator is used to provide temperature com-

pensated supply voltage for internal circuits and allows a wide operating supply range.

The output transistor of the SS2015 will be latched on (B_OP) in the presence of a sufficiently strong South or

North magnetic field facing the marked side of the package. The output will be latched off (B_RP) in the absence

of a magnetic field.

V3.10 Nov 1, 2013

12 3 4 5 6

中文翻译

下载PDF

与SS2015相关器件

型号	品牌	获取价格	描述	数据表
SS20150FL	WON-TOP	获取价格	SMD
SS2015EUA	SECELECTRONICS	获取价格	CMOS High Sensitivity Micropower Hall Latch
SS2015KUA	SECELECTRONICS	获取价格	CMOS High Sensitivity Micropower Hall Latch
SS2015LUA	SECELECTRONICS	获取价格	CMOS High Sensitivity Micropower Hall Latch
SS2019	SECELECTRONICS	获取价格	Hall Latch Position Sensor
SS2019ESOT	SECELECTRONICS	获取价格	Hall Latch Position Sensor
SS2019EUA	SECELECTRONICS	获取价格	Hall Latch Position Sensor
SS2019KSOT	SECELECTRONICS	获取价格	Hall Latch Position Sensor
SS2019KUA	SECELECTRONICS	获取价格	Hall Latch Position Sensor
SS2019LSOT	SECELECTRONICS	获取价格	Hall Latch Position Sensor