Datasheet > SS1P3L-E3/85A

SS1P3L-E3/85A

更新时间： 2024-09-30 06:13:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	365K
描述
Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

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SS1P3L-E3/85A 数据手册

SS1P3L & SS1P4L

Vishay General Semiconductor

New Product

Low V High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

DO-220AA (SMP)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters, free-

wheeling, dc-to-dc converters, and polarity protection

applications.

MAJOR RATINGS AND CHARACTERISTICS

I_F(AV)

V_RRM

I_FSM

1 A

30 V, 40 V

50 A

MECHANICAL DATA

E_AS

11.25 mJ

0.35 V, 0.38 V

150 °C

Case: DO-220AA (SMP)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

V_F

T_jmax.

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

SS1P3L

13L

SS1P4L

14L

UNIT

Device marking code

Maximum repetive peak reverse voltage

V_RRM

I_F(AV)

T_L= 140 °C

T_L= 135 °C

1.0

1.5

Maximum average forward rectified current see Fig. 1

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

I_FSM

Non-repetitive avalanche energy at I_AS= 1.5 A, L = 10 mH, T_J= 25 °C

Voltage rate of change (rated V_R)

E_AS

11.25

V/µs

°C

dv/dt

10000

Operating junction and storage temperature range

_J,T_STG

- 55 to + 150

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)

PARAMETER

TEST CONDITIONS

SYMBOL

SS1P3L

SS1P4L

UNIT

at I_F= 1.0 A, T_J= 25 °C

at I_F= 1.0 A, T_J= 125 °C

0.45

0.35

0.48

0.38

Maximuminstantaneous forwardvoltage⁽¹⁾

V_F

T_J= 25 °C

T_J= 125 °C

200

150

µA

(1)

Maximum reverse current at rated V_R

I_R

Typical junction capacitance

at 4.0 V, 1 MHz

C_J

110

130

Document Number 88915

07-Feb-06

www.vishay.com

12 3 4

中文翻译

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SS1P3L-E3/85A 替代型号

型号	品牌	替代类型	描述	数据表
SS1P3L-M3/85A	VISHAY	完全替代	DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P3L-M3/84A	VISHAY	类似代替	DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P3L-E3/84A	VISHAY	功能相似	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

与SS1P3L-E3/85A相关器件

型号	品牌	获取价格	描述	数据表
SS1P3LHE3/84A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1.5A, 30V V(RRM),
SS1P3LHE3/85A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1.5A, 30V V(RRM),
SS1P3L-HE3/85A	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, 30V V(RRM), Silicon, DO-220AA, ROHS C
SS1P3LHM3/85A	VISHAY	获取价格	DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P3LHM3-84A	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3LHM3-85A	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L-M3	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers
SS1P3L-M3/84A	VISHAY	获取价格	DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P3L-M3/85A	VISHAY	获取价格	DIODE 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PL
SS1P3L-M3-84A	VISHAY	获取价格	Low VF High Current Density Surface Mount Schottky Barrier Rectifiers

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