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SS15HE3_A/I

更新时间： 2024-11-13 22:56:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 1146K
描述
DIODE SCHOTTKY 50V 1A DO214AC

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中文翻译

获取价格

SS15HE3_A/I 数据手册

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SS12, SS13, SS14, SS15, SS16  
www.vishay.com  
Vishay General Semiconductor  
Surface-Mount Schottky Barrier Rectifier  
FEATURES  
Available  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Low forward voltage drop  
• High surge capability  
Available  
SMA (DO-214AC)  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
• AEC-Q101 qualified available  
- Automotive ordering code: base P/NHE3 or P/NHM3  
Cathode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
TYPICAL APPLICATIONS  
Design Tools  
Related  
Documents  
3D Models  
Simulation  
Tools  
Models  
For use in low voltage, high frequency inverters,  
freewheeling, DC/DC converters, and polarity protection  
applications.  
A
T
Application  
Notes  
Technical  
Notes  
Marking  
MECHANICAL DATA  
Case: SMA (DO-214AC)  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
Base P/N-M3 - halogen-free, RoHS-compliant, commercial  
grade  
IF(AV)  
1.0 A  
VRRM  
IFSM  
20 V, 30 V, 40 V, 50 V, 60 V  
40 A  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
Base P/NHM3_X - halogen-free, RoHS-compliant, and  
AEC-Q101 qualified  
VF  
0.50 V, 0.75 V  
150 °C  
TJ max.  
Package  
Circuit configuration  
SMA (DO-214AC)  
Single  
(“_X” denotes revision code e.g. A, B, .....)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2  
whisker test  
Polarity: color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS12  
SS13  
S3  
SS14  
S4  
SS15  
S5  
SS16  
S6  
UNIT  
Device marking code  
S2  
V
V
V
V
A
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
20  
30  
40  
50  
60  
14  
21  
28  
35  
42  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (fig. 1)  
20  
30  
40  
50  
60  
IF(AV)  
1.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
40  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dV/dt  
TJ  
10 000  
V/μs  
°C  
-65 to +150  
-65 to +150  
TSTG  
°C  
Revision: 23-Apr-2020  
Document Number: 88746  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

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SS15HE3_A/I 替代型号

型号 品牌 替代类型 描述 数据表
SS15HE3/5AT VISHAY

完全替代

 Rectifier Diode, Schottky, 1 Element, 1A, 50V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, P

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