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SS15P3S-M3

更新时间: 2024-09-23 12:33:47
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
5页 92K
描述
SMD Photovoltaic Solar Cell Protection Schottky Rectifier

SS15P3S-M3 数据手册

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New Product  
SS15P3S  
Vishay General Semiconductor  
SMD Photovoltaic Solar Cell Protection Schottky Rectifier  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 1.1 mm  
• Ideal for automated placement  
• Guardring for overvoltage protection  
K
• Low forward voltage drop, low power losses  
• High efficiency  
1
• Low thermal resistance  
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
TO-277A (SMPC)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
K
Anode 1  
Anode 2  
Halogen-free according to IEC 61249-2-21 definition  
Cathode  
MECHANICAL DATA  
Case: TO-277A (SMPC)  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
15 A  
30 V  
Base P/N-M3  
- halogen-free, RoHS compliant, and  
VRRM  
commercial grade  
IFSM  
280 A  
20 mJ  
0.42 V  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
EAS  
VF at IF = 15 A  
TJ max.  
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
SS15P3S  
153S  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
VRRM  
IF  
30  
V
A
15 (1)  
Maximum DC forward current (fig. 1)  
4.5 (2)  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
280  
A
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C  
Operating junction and storage temperature range  
EAS  
TOP, TSTG  
TJ  
20  
mJ  
°C  
°C  
- 55 to + 150  
200  
Junction temperature in DC forward current without reverse bias, t 1 h (3)  
Notes  
(1)  
Mounted on 30 mm x 30 mm Al PCB with 50 mm x 25 mm x 100 mm fin heat sink  
Free air, mounted on recommended copper pad area  
Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test  
(2)  
(3)  
Document Number: 89128  
Revision: 13-May-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
19  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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