Datasheet > SQS120ELNW

SQS120ELNW

更新时间： 2024-11-12 14:54:39

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描述
Automotive N-Channel 30 V (D-S) 175 °C MOSFET

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SQS120ELNW 数据手册

SQS120ELNW

Vishay Siliconix

www.vishay.com

Automotive N-Channel 30 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®1212-8SLW

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Wettable flank terminals

• Low thermal resistance with 0.75 mm profile

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Top View

Bottom View

Marking code: Q078

PRODUCT SUMMARY

V_DS(V)

_DS(on)() at V_GS= 10 V

_DS(on)() at V_GS= 4.5 V

0.0018

0.0028

192

_D(A) ^e

Configuration

Single

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK ^®1212-8SLW

SQS120ELNW

Lead (Pb)-free and halogen-free

(for detailed order number please see www.vishay.com/doc?79771)

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

192

Continuous drain current ^e

I_D

T_C= 125 °C

110

Continuous source current (diode conduction) ^e

Pulsed drain current ^{a, e}

I_S

108

I_DM

I_AS

415

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

T_C= 25 °C

119

Maximum power dissipation ^{a, e}

P_D

T_C= 125 °C

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

-55 to +175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

Junction-to-case (drain) ^d

PCB mount ^b

°C/W

R_thJC

1.26

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %

b. When mounted on 1" square PCB (FR4 material)

c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection

d. As per on JESD51-14

e. Values based on R_thJCand T_Cof 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system

S23-0244-Rev. A, 08-May-2023

Document Number: 62162

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SQS120ELNW相关器件

型号	品牌	获取价格	描述	数据表
SQS121ELNW	VISHAY	获取价格	Automotive P-Channel 20 V (D-S) 175 °C MOSFET
SQS124ELNW	VISHAY	获取价格	Automotive N-Channel 30 V (D-S) 175 °C MOSFET
SQS140ELNW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS140ENW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS141ELNW	VISHAY	获取价格	Automotive P-Channel 40 V (D-S) 175 °C MOSFET
SQS142ELNW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS142ENW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS146ELNW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS146ENW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS150ELNW	VISHAY	获取价格	Automotive N-Channel 40 V (D-S) 175 °C MOSFET

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