5秒后页面跳转
SQS141ELNW PDF预览

SQS141ELNW

更新时间: 2024-11-12 14:53:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 232K
描述
Automotive P-Channel 40 V (D-S) 175 °C MOSFET

SQS141ELNW 数据手册

 浏览型号SQS141ELNW的Datasheet PDF文件第2页浏览型号SQS141ELNW的Datasheet PDF文件第3页浏览型号SQS141ELNW的Datasheet PDF文件第4页浏览型号SQS141ELNW的Datasheet PDF文件第5页浏览型号SQS141ELNW的Datasheet PDF文件第6页浏览型号SQS141ELNW的Datasheet PDF文件第7页 
SQS141ELNW  
Vishay Siliconix  
www.vishay.com  
Automotive P-Channel 40 V (D-S) 175 °C MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PowerPAK® 1212-8SLW  
D
8
• AEC-Q101 qualified  
D
7
D
D
6
• 100 % Rg and UIS tested  
5
• Wettable flank terminals  
• Low thermal resistance with 0.75 mm profile  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
S
2
S
3
S
4
G
1
Top View  
S
Bottom View  
Marking code: Q062  
G
PRODUCT SUMMARY  
VDS (V)  
-40  
0.0100  
79  
RDS(on) () at VGS = 10 V  
I
D (A) e  
D
P-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
PowerPAK® 1212-8SLW  
SQS141ELNW  
Lead (Pb)-free and halogen-free  
(for detailed order number please see www.vishay.com/doc?79771)  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
-40  
V
VGS  
20  
TC = 25 °C  
79  
45  
Continuous drain current e  
ID  
TC = 125 °C  
Continuous source current (diode conduction) e  
Pulsed drain current a, e  
IS  
108  
A
IDM  
IAS  
227  
Single pulse avalanche current  
Single pulse avalanche energy  
33  
L = 0.1 mH  
EAS  
54  
mJ  
W
TC = 25 °C  
119  
Maximum power dissipation a, d  
PD  
TC = 125 °C  
39  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
-55 to +175  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
RthJA  
LIMIT  
54  
UNIT  
Junction-to-ambient  
Junction-to-case (drain) d  
PCB mount b  
°C/W  
RthJC  
1.26  
Notes  
a. Pulse test; pulse width 300 μs, duty cycle 2 %  
b. When mounted on 1" square PCB (FR4 material)  
c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure  
adequate bottom side solder interconnection  
d. As per on JESD51-14  
e. Values based on RthJC and TC of 25 °C. Actual values achievable will dependent on the thermal characteristics of the complete system  
S23-0337-Rev. B, 29-May-2023  
Document Number: 62033  
1
For technical questions, contact: automostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SQS141ELNW相关器件

型号 品牌 获取价格 描述 数据表
SQS142ELNW VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS142ENW VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS146ELNW VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS146ENW VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS150ELNW VISHAY

获取价格

Automotive N-Channel 40 V (D-S) 175 °C MOSFET
SQS160ELNW VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQS164ELNW VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQS166ELNW VISHAY

获取价格

Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQS16A1002AL13 TTELEC

获取价格

Thin Film Resistor Network Isolated and Bussed Circuits RoHS compliant available
SQS16A1002AL7 TTELEC

获取价格

Thin Film Resistor Network Isolated and Bussed Circuits RoHS compliant available