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SPU30P06PG PDF预览

SPU30P06PG

更新时间: 2024-11-06 13:13:59
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英飞凌 - INFINEON 晶体晶体管脉冲局域网
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SPU30P06PG 数据手册

 浏览型号SPU30P06PG的Datasheet PDF文件第2页浏览型号SPU30P06PG的Datasheet PDF文件第3页浏览型号SPU30P06PG的Datasheet PDF文件第4页浏览型号SPU30P06PG的Datasheet PDF文件第5页浏览型号SPU30P06PG的Datasheet PDF文件第6页浏览型号SPU30P06PG的Datasheet PDF文件第7页 
SPD30P06P  
SPU30P06P  
Preliminary data  
SIPMOS Power-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
0.075  
-30  
V
A
DS  
Enhancement mode  
Drain-source on-state resistance R  
DS(on)  
Avalanche rated  
Continuous drain current  
I
D
dv/dt rated  
175°C operating temperature  
Type  
Package  
P-TO252  
P-TO251  
Ordering Code  
Q67042-S4018  
Q67042-S4019  
Pin 1 PIN 2/4 PIN 3  
SPD30P06P  
SPU30P06P  
G
D
S
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
-30  
C
T = 100 °C  
-21.5  
C
Pulsed drain current  
I
-120  
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
E
250  
mJ  
AS  
I = -30 A , V = -25 V, R = 25  
D
DD  
GS  
Avalanche energy, periodic limited by T  
12.5  
6
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -30 A, V = -48 V, di/dt = 200 A/µs,  
S
DS  
T
= 175 °C  
jmax  
Gate source voltage  
Power dissipation  
V
P
±20  
125  
V
GS  
W
tot  
T = 25 °C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55...+175  
55/175/56  
°C  
j
stg  
Page 1  
1999-11-22  

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