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SPP11N60S5HKSA1 PDF预览

SPP11N60S5HKSA1

更新时间: 2024-09-27 19:24:55
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 472K
描述
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

SPP11N60S5HKSA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.65其他特性:AVALANCHE RATED
雪崩能效等级(Eas):340 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):11 A最大漏源导通电阻:0.38 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPP11N60S5HKSA1 数据手册

 浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第2页浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第3页浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第4页浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第5页浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第6页浏览型号SPP11N60S5HKSA1的Datasheet PDF文件第7页 
SPP11N60S5  
SPI11N60S5  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
600  
0.38  
11  
V
A
DS  
R
DS(on)  
I
D
Ultra low gate charge  
PG-TO262  
PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
2
Ultra low effective capacitances  
Improved transconductance  
3
2
1
P-TO220-3-1  
Type  
SPP11N60S5  
Package  
PG-TO220  
Ordering Code  
Q67040-S4198  
Q67040-S4338  
Marking  
11N60S5  
11N60S5  
SPI11N60S5  
PG-TO262  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
11  
7
C
T = 100 °C  
C
22  
340  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
E
p
jmax  
D puls  
mJ  
AS  
I = 5.5 A, V = 50 V  
D
DD  
1)  
jmax  
E
0.6  
11  
Avalanche energy, repetitive t limited by T  
AR  
AR  
I = 11 A, V = 50 V  
D
DD  
A
V
Avalanche current, repetitive t limited by T  
I
AR  
jmax AR  
Gate source voltage  
V
±20  
30  
125  
GS  
V
P
Gate source voltage AC (f >1Hz)  
GS  
tot  
Power dissipation, T = 25°C  
W
C
°C  
Operating and storage temperature  
T , T  
-55... +150  
j
stg  
Page 1  
Rev. 2.7  
2009-11-30  

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