Datasheet > SPP11N65C3_09

SPP11N65C3_09

更新时间： 2024-09-29 09:08:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
15页	569K
描述
Cool MOS? Power Transistor Feature New revolutionary high voltage technology

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中文翻译

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数据手册

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SPP11N65C3_09 数据手册

SPP11N65C3,SPA11N65C3

SPI11N65C3

Cool MOS™ Power Transistor

Feature

650

0.38

Ω

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

PG-TO262

PG-TO220FP PG-TO220

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

Type

Package

Ordering Code

Q67040-S4557

Marking

SPP11N65C3

SPA11N65C3

PG-TO220

11N65C3

PG-TO220FP SP000216318

PG-TO262 Q67040-S4561

SPI11N65C3

Maximum Ratings

Parameter

Symbol

Value

SPP_I

Unit

SPA

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

340

I =2.5A, V =50V

Avalanche energy, repetitive t limited by T

0.6

jmax

I =4A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

125

tot

Operating and storage temperature

T , T

-55...+150

°C

stg

Rev. 2.91

Page 1

2009-11-30

12 3 4 5 6 7...15

中文翻译

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