5秒后页面跳转
SPDX2N60S5 PDF预览

SPDX2N60S5

更新时间: 2024-02-01 22:13:43
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
5页 129K
描述
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3

SPDX2N60S5 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.38
雪崩能效等级(Eas):140 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):4.5 A
最大漏源导通电阻:0.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

SPDX2N60S5 数据手册

 浏览型号SPDX2N60S5的Datasheet PDF文件第2页浏览型号SPDX2N60S5的Datasheet PDF文件第3页浏览型号SPDX2N60S5的Datasheet PDF文件第4页浏览型号SPDX2N60S5的Datasheet PDF文件第5页 

与SPDX2N60S5相关器件

型号 品牌 获取价格 描述 数据表
SPDX5N60S5 INFINEON

获取价格

Power Field-Effect Transistor, 1.9A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Met
SPDX6N60S5 INFINEON

获取价格

Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Me
SPDX7N60S5 INFINEON

获取价格

Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal
SPDXXD28 SENSITRON

获取价格

DC Solid State Power Controller Module
SPE/LC503PBG1-30Q-A3 CREE

获取价格

SPECIFICATION FOR COTCO LED LAMP
SPE/LC503PBL1-15Q-A3 ETC

获取价格

SPECIFICATION FOR COTCO LED LAMP
SPE02M50T-A JSMC

获取价格

DIP23A-FP
SPE0504 SYNC-POWER

获取价格

4-Line ESD Protection Array
SPE0504_10 SYNC-POWER

获取价格

4-Line ESD Protection Array
SPE0504S26RG SYNC-POWER

获取价格

4-Line ESD Protection Array