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SPDX5N60S5 PDF预览

SPDX5N60S5

更新时间: 2024-01-05 04:33:24
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
5页 49K
描述
Power Field-Effect Transistor, 1.9A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3

SPDX5N60S5 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.39
雪崩能效等级(Eas):50 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):1.9 A
最大漏源导通电阻:2.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):3.8 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

SPDX5N60S5 数据手册

 浏览型号SPDX5N60S5的Datasheet PDF文件第2页浏览型号SPDX5N60S5的Datasheet PDF文件第3页浏览型号SPDX5N60S5的Datasheet PDF文件第4页浏览型号SPDX5N60S5的Datasheet PDF文件第5页 
SPUX5N60S5  
SPDX5N60S5  
Target data sheet  
Cool MOS Power Transistor  
N-Channel  
Enhancement mode  
Ultra low gate charge  
Avalanche rated  
dv/dt rated  
Pin 1  
Pin 2  
Pin 3  
150°C operating temperature  
G
D
S
Type  
V
I
R
DS(on)  
Marking  
Package  
Ordering Code  
DS  
D
SPUX5N60S5 600 V 1.8 A  
SPDX5N60S5  
X5N60S5  
P-TO251-3-1  
P-TO252  
-
-
3 Ω  
Maximum Ratings , at T = 25 ° C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
A
I
D
T = 25 °C  
1.8  
1.1  
C
T = 100 °C  
C
3.6  
50  
6
Pulsed drain current , t = 1ms  
I
D puls  
p
T = 25 °C  
C
Avalanche energy, single pulse  
mJ  
E
AS  
I = 1.8 A, V = 50 V, R = 25 Ω  
D
DD  
GS  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 1.8 A, V <V , di/dt = 100 A/µs,  
DSS  
S
DS  
T
= 150 °C  
jmax  
Gate source voltage  
Power dissipation  
V
V
±20  
GS  
P
25  
W
tot  
T = 25 °C  
C
Operating temperature  
T
-55 ...+150  
-55 ... +150  
55/150/56  
°C  
j
Storage temperature  
T
stg  
IEC climatic category; DIN IEC 68-1  
Semiconductor Group  
1
04 / 1998  

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