SPD6620SM

更新时间： 2024-11-05 13:13:55

品牌	Logo	应用领域
SSDI		超快恢复二极管快速恢复二极管
页数	文件大小	规格书
2页	149K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SPD6620SM 数据手册

SPD6620 thru SPD6625

SPD6620SMS thru SPD6625SMS

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

1.5 - 2 AMPS

200 ─ 1000 VOLTS

Designer’s Data Sheet

Part Number/Ordering Information ^1/

30 – 60 nsec ULTRA FAST RECOVERY

RECTIFIER

SPD __ __ __

Screening ^2/

__ = Not Screened

TX = TX Level

TXV = TXV

│

└

│

└

FEATURES:

•

Ultra Fast Reverse Recovery Time 30-60 ns Max ^4/

PIV to 1000 Volts (1200V Version Available)

Hermetically Sealed

S = S Level

Low Reverse Leakage Current

Rugged Single Chip Construction

For High Efficiency Applications

Available in Axial, Round Tab & Square Tab

Versions

Metallurgically Bonded

TX, TXV, and S-Level Screening Available

Ruggedized Replacement for:

1N 6620 thru 1N6625, US

Package Type

__ = Axial Leaded

SMS = Surface Mount Square Tab

Family

•

6620 = 200V, 2A

6621 = 400V, 2A

6622 = 600V, 2A

6623 = 800V, 1.5A

6624 = 900V, 1.5A

6625 = 1000V, 1.5A

MAXIMUM RATINGS ^3/

RATING

SYMBOL

VALUE

UNIT

SPD6620

SPD6621

SPD6622

SPD6623

SPD6624

SPD6625

200

400

600

800

900

1000

Peak Repetitive Reverse

Voltage

V_RRM

V_RWM

V_R

Volts

And

DC Blocking Voltage

SPD6620 thru SPD6622

SPD6623 thru SPD6625

1.5

Average Rectified Forward Current

I_O

Amps

(Resistive Load, 60 Hz, Sine Wave, T_L= 25°C)

Peak Surge Current

I_FSM

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

equilibrium between pulses, T_C= 25°C)

-65 to +175

Operating & Storage Temperature

T_OPand T_STG

°C

Junction to Lead for Axial, L =.375"

Thermal Resistance,

R_θJL

R_θJE

°C/W

Junction to End Tab

NOTES:

Axial Leaded

SMS

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

4/ Recovery Conditions: I_F= 0.5 Amp, I_R= 1.0 Amp rec. to .25 Amp.

5/ SPD6625- I_FSM= 15A

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0102C

DOC

中文翻译

下载PDF

与SPD6620SM相关器件

型号	品牌	获取价格	描述	数据表
SPD6620SMS	SSDI	获取价格	2A, 200V, SILICON, RECTIFIER DIODE, HERMETIC SEALED, SMS, 2 PIN
SPD6620SM-S	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN
SPD6620SMSS	SSDI	获取价格	1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 – 60 nsec UL
SPD6620SMSTX	SSDI	获取价格	1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 – 60 nsec UL
SPD6620SMSTXV	SSDI	获取价格	1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 – 60 nsec UL
SPD6620SMTX	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN
SPD6620TX	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SPD6620TXV	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2
SPD6621	SSDI	获取价格	1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 – 60 nsec UL
SPD6621S	SSDI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2

与SPD6620SM相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

10
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

SPD6620SM

SPD6620SM 数据手册

与SPD6620SM相关器件

与SPD6620SM相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SPD6620SM

SPD6620SM 数据手册

与SPD6620SM相关器件

与SPD6620SM相关文章

您还可以找

您在本页遇到什么问题？