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SPD6621SMTXV PDF预览

SPD6621SMTXV

更新时间: 2024-11-05 19:59:15
品牌 Logo 应用领域
SSDI 功效二极管
页数 文件大小 规格书
2页 114K
描述
Rectifier Diode, 1 Phase, 1 Element, 2A, 400V V(RRM), Silicon, HERMETIC SEALED, SM, 2 PIN

SPD6621SMTXV 技术参数

生命周期:Active包装说明:O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.68其他特性:METALLURGICALLY BONDED
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-LELF-R2
最大非重复峰值正向电流:20 A元件数量:1
相数:1端子数量:2
最大输出电流:2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.03 µs表面贴装:YES
端子形式:WRAP AROUND端子位置:END
Base Number Matches:1

SPD6621SMTXV 数据手册

 浏览型号SPD6621SMTXV的Datasheet PDF文件第2页 
SPD6620 thru SPD6625  
Series  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
1.5 - 2 AMP  
ULTRA FAST RECOVERY RECTIFIER  
200 1000 VOLTS  
Designer’s Data Sheet  
Part Number/Ordering Information 1/  
SPD __ __ __  
30 – 60 nsec  
Screening 2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
FEATURES:  
Ultra Fast Reverse Recovery Time 30-60 ns Max 4/  
PIV to 1000 Volts (1200V Version Available)  
Hermetically Sealed  
S = S Level  
Package Type  
__ = Axial Leaded  
Low Reverse Leakage Current  
Rugged Single Chip Construction  
For High Efficiency Applications  
SMS = Surface Mount Square Tab  
SM = Surface Mount Round Tab6/  
Available in Axial, Round Tab & Square Tab Versions  
Family  
Metallurgically Bonded  
TX, TXV, and S-Level Screening Available2/  
Ruggedized Replacement for 1N6620 thru 1N6625, US  
6623 = 800V, 1.5A  
6624 = 900V, 1.5A  
6625 = 1000V, 1.5A  
6620 = 200V, 2A  
6621 = 400V, 2A  
6622 = 600V, 2A  
MAXIMUM RATINGS 3/  
RATING  
SYMBOL  
VALUE  
UNIT  
SPD6620  
SPD6621  
SPD6622  
SPD6623  
SPD6624  
SPD6625  
200  
400  
600  
800  
900  
1000  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
And  
DC Blocking Voltage  
Volts  
Average Rectified Forward Current  
(Resistive Load, 60 Hz, Sine Wave, TL =  
25°C)  
SPD6620 thru SPD6622  
SPD6623 thru SPD6625  
2
1.5  
IO  
Amps  
Amps  
5/  
Peak Surge Current  
20  
IFSM  
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to  
reach equilibrium between pulses, TC = 25°C)  
-65 to +175  
TOP and TSTG  
Operating & Storage Temperature  
°C  
RθJL  
RθJE  
38  
20  
Junction to Lead for Axial, L =.375"  
Thermal Resistance,  
°C/W  
Junction to End Tab  
NOTES:  
Axial Leaded  
SMS  
SM  
1/ For Ordering Information, Price, and Availability- Contact Factory.  
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on  
Request.  
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.  
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp rec. to .25 Amp.  
5/ SPD6625- IFSM = 15A  
6/ SM Package Available for SPD6620 - SPD6622  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RC0102F  
DOC  

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1.5 - 2 AMPS 200 ─ 1000 VOLTS 30 – 60 nsec UL