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SPD30P06P PDF预览

SPD30P06P

更新时间: 2024-11-19 22:42:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
9页 115K
描述
SIPMOS Power-Transistor

SPD30P06P 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:20
晶体管元件材料:SILICONBase Number Matches:1

SPD30P06P 数据手册

 浏览型号SPD30P06P的Datasheet PDF文件第2页浏览型号SPD30P06P的Datasheet PDF文件第3页浏览型号SPD30P06P的Datasheet PDF文件第4页浏览型号SPD30P06P的Datasheet PDF文件第5页浏览型号SPD30P06P的Datasheet PDF文件第6页浏览型号SPD30P06P的Datasheet PDF文件第7页 
SPD30P06P  
SPU30P06P  
Preliminary data  
SIPMOS Power-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
0.075  
-30  
V
A
DS  
Enhancement mode  
Drain-source on-state resistance R  
DS(on)  
Avalanche rated  
Continuous drain current  
I
D
dv/dt rated  
175°C operating temperature  
Type  
Package  
P-TO252  
P-TO251  
Ordering Code  
Q67042-S4018  
Q67042-S4019  
Pin 1 PIN 2/4 PIN 3  
SPD30P06P  
SPU30P06P  
G
D
S
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
-30  
C
T = 100 °C  
-21.5  
C
Pulsed drain current  
I
-120  
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
E
250  
mJ  
AS  
I = -30 A , V = -25 V, R = 25  
D
DD  
GS  
Avalanche energy, periodic limited by T  
12.5  
6
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -30 A, V = -48 V, di/dt = 200 A/µs,  
S
DS  
T
= 175 °C  
jmax  
Gate source voltage  
Power dissipation  
V
P
±20  
125  
V
GS  
W
tot  
T = 25 °C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55...+175  
55/175/56  
°C  
j
stg  
Page 1  
1999-11-22  

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