Datasheet > SPB80N06S-08_05

SPB80N06S-08_05

更新时间： 2024-10-01 09:09:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	209K
描述
SIPMOS Power-Transistor

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中文翻译

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数据手册

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SPB80N06S-08_05 数据手册

SPB80N06S-08

SPI80N06S-08, SPP80N06S-08

SIPMOS^®Power-Transistor

Product Summary

Features

V _DS

7.7

• N-channel - Normal Level -Enhancement mode

• Automotive AEC Q101 qualified

R _DS(on),max(SMD version)

I _D

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

Green Package

PG-TO263-3-2

• Avalanche test

PG-TO262-3-1

PG-TO220-3-1

• Repetive Avalanche up to

T_jmax= 175 °C

V_DD=30 V, I_D=80 A, V_GS=10 V, R_G=2.4 W

• dv /dt rated

Type

Package

Ordering Code Marking

SPB80N06S-08

SPI80N06S-08

SPP80N06S-08

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

SP0000-84808

1N0608

T _C=25 °C, V _GS=10 V

SP0000-82518

1N0608

T _C=100 °C, V _GS=10 V

SP0000-84809 1N0608

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V _GS=10 V

T _C=100 °C, V _GS=10 V

T _C=25 °C

320

700

Pulsed drain current²⁾

I _D,pulse

I _D=80 A, R _GS=25 W,

V _DD=25 V

E _AS

Avalanche energy, single pulse

Avalanche energy, periodic²⁾

E _AR

T _j=175 °C

I _D=80 A, V _DS=40 V,

di /dt =200 A/µs,

T _j,max=175 °C

Reverse diode dv /dt ²⁾

dv /dt

kV/µs

V _GS

Gate source voltage

±20

300

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2005-06-28

12 3 4 5 6 7 8

中文翻译

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