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SPB80P06PGATMA1 PDF预览

SPB80P06PGATMA1

更新时间: 2024-10-01 15:52:35
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
11页 610K
描述
Power Field-Effect Transistor, 80A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

SPB80P06PGATMA1 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:18 weeks风险等级:1.63
其他特性:AVALANCHE RATED雪崩能效等级(Eas):823 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):80 A
最大漏源导通电阻:0.023 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):320 A
认证状态:Not Qualified表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPB80P06PGATMA1 数据手册

 浏览型号SPB80P06PGATMA1的Datasheet PDF文件第2页浏览型号SPB80P06PGATMA1的Datasheet PDF文件第3页浏览型号SPB80P06PGATMA1的Datasheet PDF文件第4页浏览型号SPB80P06PGATMA1的Datasheet PDF文件第5页浏览型号SPB80P06PGATMA1的Datasheet PDF文件第6页浏览型号SPB80P06PGATMA1的Datasheet PDF文件第7页 
SPB80P06P G  
SIPMOS Power-Transistor  
Features  
Product Summary  
P-Channel  
Drain source voltage  
V
-60  
0.023  
-80  
V
A
DS  
Enhancement mode  
Drain-source on-state resistance R  
DS(on)  
Avalanche rated  
Continuous drain current  
I
D
dv/dt rated  
175°C operating temperature  
° Pb-free lead plating: RoHS compliant  
° Halogen-free according to IEC61249-2-21  
° Qualified according to AEC Q101  
Pin 1 PIN 2/4 PIN 3  
Type  
Package  
Lead free  
G
D
S
SPB80P06P G  
PG-TO263-3  
Yes  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
Continuous drain current  
I
D
A
1)  
T
25 °C,  
-80  
-64  
C =  
T = 100 °C  
C
Pulsed drain current  
I
-320  
D puls  
T = 25 °C  
C
Avalanche energy, single pulse  
E
E
823  
mJ  
AS  
AR  
I = -80 A , V = -25 V, R = 25  
D
DD  
GS  
Avalanche energy, periodic limited by T  
34  
6
jmax  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = -80 A, V = -48 , di/dt = 200 A/µs,  
S
DS  
T
= 175 °C  
jmax  
Gate source voltage  
Power dissipation  
V
P
±20  
340  
V
GS  
tot  
W
T = 25 °C  
C
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55...+175  
55/175/56  
°C  
j
stg  
1
Current limited by bondwire; with anRthJC = 0.4 K/W the chip is able to carry ID = -91A  
Rev 1.6 Page 1  
2011-09-01  

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