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SPA513-04TXV PDF预览

SPA513-04TXV

更新时间： 2024-11-16 13:01:59
品牌 Logo 应用领域
SSDI 整流二极管桥式整流二极管高压局域网
页数 文件大小 规格书
4页 286K
描述
Bridge Rectifier Diode, 1 Phase, 20000V V(RRM), Silicon,

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中文翻译

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SPA513-04TXV 技术参数

生命周期：Active包装说明：R-XUFM-X19
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.69最小击穿电压：20000 V
配置：COMPLEX二极管元件材料：SILICON
二极管类型：BRIDGE RECTIFIER DIODEJESD-30 代码：R-XUFM-X19
最大非重复峰值正向电流：25 A元件数量：22
相数：1端子数量：19
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：FLANGE MOUNT参考标准：MIL-19500
最大重复峰值反向电压：20000 V表面贴装：NO
端子形式：UNSPECIFIED端子位置：UPPER
Base Number Matches：1

SPA513-04TXV 数据手册

 浏览型号SPA513-04TXV的Datasheet PDF文件第2页浏览型号SPA513-04TXV的Datasheet PDF文件第3页浏览型号SPA513-04TXV的Datasheet PDF文件第4页 
SPA513 Series  
1 AMP, 15,000 to 20,000 VOLTS  
HIGH VOLTAGE  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
RECTIFIER BRIDGE  
Designer’s Data Sheet  
FEATURES:  
Part Number/Ordering Information 1/  
__ __ __  
Aerospace High Voltage Power Supply Applications  
Multiple High Voltage Transformer Rectification  
High Voltage Multiplier Design Using External Capacitors  
Low Mechanical Stress Design  
Excellent Thermal Resistance : 2.5ºC/W  
TX, TXV, and Space Level Screening Available  
SPA513-  
│
│
│
│
│
│
│
│
└
│
│
│
│
└
└ Finish  
__ = Standard Case  
SAB = Sand Blasted Case  
Screening 2/  
Consult Factory For:  
__ = Not Screened  
TX = TX Level  
TXV = TXV Level  
S = Space Level  
Higher Blocking Voltages  
Faster Switching Times  
Other Electrical Configurations  
Available with a sandblasted case to promote adhesion add  
“SAB” suffix  
Dash Number 3/  
MAXIMUM RATINGS  
CHARACTERISTIC  
SYMBOL  
VALUE  
UNIT  
15  
17.5  
20  
20  
12.5  
10  
SPA513-02  
SPA513-03  
SPA513-04  
SPA513-05  
Peak Repetitive Reverse and DC Blocking Voltage3/  
(Module)  
VR (MODULE)  
kV  
SPA513-06 (BR1)  
SPA513-06 (BR2)  
Peak Repetitive Reverse and DC Blocking Voltage  
TC = 55ºC  
VR  
IO  
3.3  
1
kV  
A
(Each Bridge)  
Average Rectified Forward Current  
(Non-Repetitive, t = 8.3 msec Pulse)  
Peak Surge Current  
(Non-Repetitive, t = 8.3 msec Pulse, TA = 25ºC)  
IFSM  
25  
A
Storage & Operating Temperature Range  
Thermal Resistance, Junction to Base  
TOP & TSTG  
RθJB  
-65 to +150  
2.5  
ºC  
ºC/W  
ELECTRICAL CHARACTERISTICS, Each Bridge Leg, @ TA = 25ºC (Unless Otherwise Specified)  
PARAMETER  
SYMBOL  
MIN  
MAX  
UNIT  
Instantaneous Forward Voltage Drop  
(IF = 1.0 A, 300 μsec Pulse Minimum)  
VF1  
–
7.5  
V
IR1  
IR2  
–
–
1.0  
50  
–
TA = 25ºC  
TA = 100ºC  
Reverse Leakage  
(VR = 2.5 kV, 300 μsec Pulse Minimum)  
μA  
GΩ  
nsec  
SPA513-02, -03, -04: All Terminals to Base @ 15 kV  
SPA513-05, -06: All Terminals to Base @ 20 kV  
Insulation Resistance  
RINSUL  
trr  
10  
–
–
Reverse Recovery Time  
(IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A)  
60  
Notes: 1/ For ordering information, price, and availability- Contact factory.  
2/ Screened based on MIL-PRF-19500. Screening flows available on request.  
3/ For each dash number, refer to VR(MODULE) rating, schematic, and outline.  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: PM0012G  
DOC  
1234

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