生命周期: | Active | 包装说明: | S-XUFM-N4 |
针数: | 4 | Reach Compliance Code: | compliant |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.61 |
最小击穿电压: | 1000 V | 配置: | BRIDGE, 4 ELEMENTS |
二极管元件材料: | SILICON CARBIDE | 二极管类型: | BRIDGE RECTIFIER DIODE |
JESD-30 代码: | S-XUFM-N4 | 最大非重复峰值正向电流: | 26 A |
元件数量: | 4 | 相数: | 1 |
端子数量: | 4 | 最高工作温度: | 200 °C |
最低工作温度: | -55 °C | 最大输出电流: | 20 A |
封装主体材料: | UNSPECIFIED | 封装形状: | SQUARE |
封装形式: | FLANGE MOUNT | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 1000 V | 表面贴装: | NO |
技术: | SCHOTTKY | 端子形式: | NO LEAD |
端子位置: | UPPER | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SPA555MSMTX | SSDI |
获取价格 |
暂无描述 | |
SPA555MSMTXV | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1000V V(RRM), Silicon Carbide, 1.250 X 1.2 | |
SPA555MTX | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1000V V(RRM), Silicon Carbide, | |
SPA555MTXV | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1000V V(RRM), Silicon Carbide, | |
SPA555N | SSDI |
获取价格 |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE | |
SPA555NL | SSDI |
获取价格 |
32 A, 1.2 kV SiC Schottky Single Phase Bridge | |
SPA555NLS | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1200V V(RRM), Silicon Carbide, | |
SPA555NLTXV | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1200V V(RRM), Silicon Carbide, | |
SPA555NSM | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1200V V(RRM), Silicon Carbide, 1.250 X 1.2 | |
SPA555NSMTX | SSDI |
获取价格 |
Bridge Rectifier Diode, Schottky, 1 Phase, 20A, 1200V V(RRM), Silicon Carbide, 1.250 X 1.2 |