Datasheet > SP000807602

SP000807602

更新时间： 2024-11-11 19:40:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	755K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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SP000807602 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

SP000807602 数据手册

BSC052N03LS

OptiMOS^TMPower-MOSFET

Product Summary

Features

V_DS

5.2

1.9

• Optimized for high performance Buck converter

• Very low on-resistance R _DS(on)@ V _GS=4.5 V

• 100% avalanche tested

R_DS(on),max

I_D

Q_GD

• Superior thermal resistance

Q_G(0V..10V)

• N-channel

• Qualified according to JEDEC¹⁾for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

PG-TDSON-8

Type

Package

Marking

BSC052N03LS

PG-TDSON-8

052N03LS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

V _GS=10 V, T _C=100 °C

Continuous drain current

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

V _GS=10 V, T _A=25 °C,

R _thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

228

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=35 A, R _GS=25 W

±20

¹⁾J-STD20 and JESD22

Rev. 2.2

page 1

2013-05-14

12 3 4 5 6 7...10

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