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SP000757916 PDF预览

SP000757916

更新时间: 2024-11-11 19:48:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 527K
描述
Small Signal Bipolar Transistor,

SP000757916 技术参数

生命周期:End Of Life包装说明:,
Reach Compliance Code:compliant风险等级:5.79
Base Number Matches:1

SP000757916 数据手册

 浏览型号SP000757916的Datasheet PDF文件第2页浏览型号SP000757916的Datasheet PDF文件第3页浏览型号SP000757916的Datasheet PDF文件第4页浏览型号SP000757916的Datasheet PDF文件第5页浏览型号SP000757916的Datasheet PDF文件第6页浏览型号SP000757916的Datasheet PDF文件第7页 
BCR22PN  
NPN/PNP Silicon Digital Transistor Array  
Switching circuit, inverter, interface circuit,  
driver circuit  
4
5
3
2
6
Two (galvanic) internal isolated NPN/PNP  
1
Transistors in one package  
Built in bias resistor NPN and PNP  
(R =22 k, R =22 k)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1
2
C1  
6
B2  
5
E2  
4
R2  
R1  
TR2  
TR1  
R1  
R2  
1
2
3
E1  
B1  
C2  
EHA07176  
Tape loading orientation  
Marking on SOT-363 package  
(for example W1s)  
corresponds to pin 1 of device  
Top View  
6 5 4  
W1s  
Position in tape: pin 1  
opposite of feed hole side  
1 2 3  
Direction of Unreeling  
EHA07193  
Type  
BCR22PN  
Marking  
WPs  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1  
Package  
SOT363  
Maximum Ratings for NPN and PNP Types  
Parameter  
Symbol  
Value  
Unit  
50  
50  
V
Collector-emitter voltage  
Collector-base voltage  
Input forward voltage  
V
V
V
V
CEO  
CBO  
i(fwd)  
i(rev)  
60  
10  
Input reverse voltage  
100  
250  
150  
mA  
mW  
°C  
DC collector current  
Total power dissipation, T = 115 °C  
Junction temperature  
Storage temperature  
I
P
T
j
T
C
S
tot  
-65 ... 150  
stg  
Thermal Resistance  
Junction - soldering point  
1)  
R
140  
K/W  
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-28  
1

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