Datasheet > SP000641916

SP000641916

更新时间： 2023-01-02 23:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
19页	1266K
描述
Power Field-Effect Transistor,

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SP000641916 数据手册

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics

Table 8

Gate charge characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate to drain charge

Gate charge total

Q_gs

7.6

V_DD=480 V, I_D=9.5A,

V_GS=0 to 10 V

Q_gd

Q_g

Gate plateau voltage

V_plateau

5.4

Table 9

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=9.5A,

T_j=25 °C

Reverse recovery time

t_rr

430

6.9

µC

V_R=400 V, I_F=9.5A,

di_F/dt=100 A/µs

(see table 22)

Reverse recovery charge

Peak reverse recovery current

Q_rr

I_rrm

Final Data Sheet

Rev. 2.2, 2014-12-02

1...4 5 678 9 10...19

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