Datasheet > SP000641916

SP000641916

更新时间： 2023-01-02 23:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
19页	1266K
描述
Power Field-Effect Transistor,

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SP000641916 数据手册

600V CoolMOSTM C6 Power Transistor

IPx60R190C6

Maximum ratings

at Tj = 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Min. Typ. Max.

Unit Note / Test Condition

Continuous drain current¹⁾

20.2

12.8

TC= 25 °C

T_C=100°C

T_C=25 °C

Pulsed drain current²⁾

ID,pulse

EAS

Avalanche energy, single pulse

418

ID=3.4 A,VDD=50 V

(see table 21)

Avalanche energy, repetitive

Avalanche current, repetitive

MOSFET dv/dt ruggedness

Gate source voltage

0.63

3.4

ID=3.4 A,VDD=50 V

EAR

IAR

dv/dt

V/ns

V_DS=0...480 V

static

- 20

- 30

VGS

AC (f>1 Hz)

TC=25 °C

Power dissipation for

151

Ptot

TO-220, TO-247, TO-262, TO-263

Power dissipation for

TO-220 FullPAK

Ptot

Operating and storage temperature

- 55

150

°C

Tj,Tstg

Mounting torque

TO-220, TO-247

Ncm M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

M2.5 screws

Continuous diode forward current

Diode pulse current²⁾

17.5

TC=25 °C

IS,pulse

dv/dt

dif/dt

Reverse diode dv/dt³⁾

V/ns

A/µs

VDS=0...400 V,ISD& ID,

Tj=25 °C

500

Maximum diode

commutation speed³⁾

(see table 22)

2500

VISO

Insulation withstand voltage

TO-220 FullPAK

VRMS, T_C=25 °C, t = 1 min

1) Limited by Tj,max. Maximum duty cycle D=0.75

2) Pulse widtht_plimited by Tj,max

3) Identical low side and high side switch with identical RG

Final Data Sheet

Rev. 2.2, 2014-12-02

1 2 345 6 7...19

下载PDF

与SP000641916相关器件

型号	品牌	描述	获取价格	数据表
SP000656590	INFINEON	Interface Circuit,	获取价格
SP000665922	INFINEON	LED Driver,	获取价格
SP000665924	INFINEON	LED Driver,	获取价格
SP000671630	INFINEON	Power Field-Effect Transistor,	获取价格
SP000671756	INFINEON	Power Field-Effect Transistor,	获取价格
SP000677894	INFINEON	Power Field-Effect Transistor,	获取价格