Datasheet > SP000677894

SP000677894

更新时间： 2024-02-29 01:40:12

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	758K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SP000677894 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.74
Base Number Matches：	1

SP000677894 数据手册

IPB200N25N3 G IPP200N25N3 G

IPI200N25N3 G

OptiMOS^TM3 Power-Transistor

Product Summary

Features

V_DS

250

• N-channel, normal level

R_DS(on),max

I_D

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Halogen-free according to IEC61249-2-21

• Ideal for high-frequency switching and synchronous rectification

Type

IPB200N25N3 G

IPP200N25N3 G

IPI200N25N3 G

Package

Marking

PG-TO263-3

200N25N

PG-TO220-3

200N25N

PG-TO262-3

200N25N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

256

320

I _D=47 A, R _GS=25 W

Avalanche energy, single pulse

Reverse diode dv /dt

dv /dt

V _GS

kV/µs

Gate source voltage

±20

P _tot

T _C=25 °C

Power dissipation

300

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 175

55/175/56

¹⁾J-STD20 and JESD22

²⁾See figure 3

Rev. 2.4

page 1

2011-07-14

12 3 4 5 6 7...11

中文翻译

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