Datasheet > SP000671756

SP000671756

更新时间： 2024-11-11 21:12:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	158K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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SP000671756 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

SP000671756 数据手册

IPB80N04S4-03

IPI80N04S4-03, IPP80N04S4-03

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

3.3

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

4N0403

IPB80N04S4-03

IPI80N04S4-03

IPP80N04S4-03

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

I _AS

T _C=25°C

320

200

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=40A

V_GS

P_tot

±20

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2010-04-13

12 3 4 5 6 7...9

中文翻译

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