Datasheet > SP000641916

SP000641916

更新时间： 2023-01-02 23:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
19页	1266K
描述
Power Field-Effect Transistor,

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数据手册

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SP000641916 数据手册

600V CoolMOS" C6 Power Transistor

IPx60R190C6

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 6

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

600

2.5

Typ.

Max.

Drain-source breakdown voltage V_(BR)DSS

V_GS=0 V, I_D=0.25 mA

V_DS=V_GS, I_D=0.63mA

Gate threshold voltage

V_GS(th)

I_DSS

3.5

Zero gate voltage drain current

µA

V_DS=600 V, V_GS=0 V,

T_j=25 °C

V_DS=600 V, V_GS=0 V,

T_j=150 °C

Gate-source leakage current

I_GSS

100

V_GS=20 V, V_DS=0 V

Drain-source on-state resistance R_DS(on)

0.17

0.19

V_GS=10 V, I_D=9.5 A,

T_j=25 °C

0.44

8.5

V_GS=10 V, I_D=9.5 A,

T_j=150 °C

Gate resistance

R_G

f=1 MHz, open drain

Table 7

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

1400

Max.

Input capacitance

Output capacitance

C_iss

V_GS=0 V, V_DS=100 V,

f=1 MHz

C_oss

C_o(er)

Effective output capacitance,

energy related¹⁾

V_GS=0 V,

V_DS=0...480 V

Effective output capacitance, time C_o(tr)

related²⁾

266

I_D=constant, V_GS=0 V

V_DS=0...480V

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

110

V_DD=400 V,

V_GS=13 V, I_D=9.5A,

R_G= 3.4!

Turn-off delay time

Fall time

(see table 20)

1) C_o(er)is a fixed capacitance that gives the same stored energy as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

2) C_o(tr)is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_(BR)DSS

Final Data Sheet

Rev. 2.2, 2014-12-02

1...3 4 567 8 9...19

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