Datasheet > SOT666

SOT666

更新时间： 2024-11-20 09:11:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		放大器全球定位系统
页数	文件大小	规格书
10页	156K
描述
GPS HIGH GAIN LNA ICs

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中文翻译

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数据手册

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SOT666 数据手册

SMA661AS

GPS HIGH GAIN LNA ICs

PRELIMINARY DATA

GENERAL FEATURES

Figure 1. Package

■ LOW NOISE FIGURE 1.4 dB @ 1.575 GHz

■ HIGH GAIN 17 dB @ 1.575 GHz

■ POWER DOWN FUNCTION

SOT666 (Lead-Free)

1.65 x 1.2 x 0.57 mm

■ TEMPERATURE COMPENSATED

■ UNCONDITIONALLY STABLE

■ INTEGRATED OUTPUT MATCHING

■ ESD PROTECTION (± 2kV HBM)

■ 70 GHz Silicon Germanium TECHNOLOGY

■ LEAD-FREE STRAIGHT PACKAGE (SOT666)

Top View

APPLICATIONS

■ GPS

DESCRIPTION

Table 1. Pin Connection

Pin No.

SMA661AS is a product of the SMA Family

(Silicon MMIC Amplifiers), it uses ST state-of-the

art SiGe BiCMOS technology.

The excellent RF performances (17dB Gain and

1.4dB NF at 1.575GHz) and the few external

component counts (just one capacitor) make the

SMA661AS an ideal solution for GPS Low Noise

Amplifier. SMA661AS embeds a power down

function avoiding to use an external switch; in

Pin Name

RF IN

GND

RF OUT

GND

power down mode (V ≤ V

) the current con-

PDL

sumption is about 10 nA. It is housed in ultra min-

iature SOT666 plastic package (1.65mm x

1.2mm x 1.57mm).

Vcc

Table 2. Order Codes

Package

Tape and Reel

SOT666

SMA661ASTR

Figure 2. Circuit Schematic

VCC (6)

RF OUT(4)

RF IN (1)

RF input

SMA661AS

RF Output

33nF

PD (3)

GND (2,5)

Rev. 2

October 2005

1/10

12 3 4 5 6 7...10

中文翻译

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