Datasheet > SNA-586

SNA-586

更新时间： 2024-01-24 07:50:28

品牌	Logo	应用领域
其他 - ETC		放大器射频微波
页数	文件大小	规格书
6页	354K
描述
DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier

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数据手册

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SNA-586 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	16.4 dB	最大输入功率 (CW)：	16 dBm
JESD-609代码：	e0	最大工作频率：	5000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	最大电压驻波比：	1.4
Base Number Matches：	1

SNA-586 数据手册

Preliminary

Product Description

SNA-586

Stanford Microdevices’SNA-586 is a high performance Gallium

Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A

Darlington configuration is utilized for broadband performance

up to 5 GHz. The heterojunction increases breakdown voltage

and minimizes leakage current between junctions. Cancellation

of emitter junction non-linearities results in higher suppression of

intermodulation products. Typical IP3 at 850 MHz with 65mA is

32.5 dBm.

DC-5 GHz, Cascadable

GaAs HBT MMIC Amplifier

NGA-586 Recommended for New Designs

These unconditionally stable amplifiers provide 18 dB of gain and

18.4 dBm of 1dB compressed power and require only a single

positive voltage supply. Only 2 DC-blocking capacitors, a bias

resistor and an optional inductor are needed for operation. This

MMIC is an ideal choice for wireless applications such as

cellular, PCS, CDPD, wireless data and SONET.

Product Features

Small Signal Gain vs. Frequency @ I_D=65mA

•High Output IP3: 32.5 dBm @ 850 MHz

• Cascadable 50 Ohm Gain Block

• Patented GaAs HBT Technology

• Operates From Single Supply

Applications

• Cellular, PCS, CDPD, Wireless Data, SONET

Frequency GHz

Electrical Specifications

Parameters: Test Conditions:

Symbol

Units

Min.

Typ.

Max.

GHz

Z₀= 50 Ohms, I_D= 65mA, T = 25°C

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

17.6

18.4

Output Power at 1dB Compression

P_1dB

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

dBm

32.5

31.6

Third Order Intercept Point

Power out per tone = 0 dBm

IP₃

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

17.6

19.6

18.1

17.4

Small Signal Gain

S₂₁

Bandwidth (Determined by S₁₁, S₂₂Values)

MHz

5000

1.4:1

S₁₁

S₂₂

Input VSWR

f = DC-5000 MHz

Output VSWR

f = 850 MHz

f = 1950 MHz

f = 2400 MHz

22.3

21.6

21.3

Reverse Isolation

S₁₂

Noise Figure, Z_S= 50 Ohms

Device Voltage

f = 1950 MHz

4.0

4.9

254

4.4

5.4

V_D

Rth,j-l

Thermal Resistance (junction - lead)

^oC/W

The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.

Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford

Microdevices product for use in life-support devices and/or systems.

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101397 Rev A

12 3 4 5 6

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