Datasheet > SNA-586

SNA-586

更新时间： 2024-02-14 00:39:14

品牌	Logo	应用领域
其他 - ETC		放大器射频微波
页数	文件大小	规格书
6页	354K
描述
DC-5 GHz, Cascadable GaAs HBT MMIC Amplifier

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技术参数
数据手册

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SNA-586 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	16.4 dB	最大输入功率 (CW)：	16 dBm
JESD-609代码：	e0	最大工作频率：	5000 MHz
最小工作频率：		最高工作温度：	85 °C
最低工作温度：	-40 °C	射频/微波设备类型：	WIDE BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	最大电压驻波比：	1.4
Base Number Matches：	1

SNA-586 数据手册

Preliminary

SNA-586 DC-5GHz Cascadable MMIC Amplifier

Pin #

Function

RF IN

Description

RF input pin. This pin requires the use of an external DC blocking capacitor

chosen for the frequency of operation.

GND

Connection to ground. Use via holes for best performance to reduce lead

inductance. Place vias as close to ground leads as possible.

RF OUT/Vcc

RF output and bias pin. Bias should be supplied to this pin through an external

series resistor and RF choke inductor. Because DC biasing is present on this

pin, a DC blocking capacitor should be used in most applications (see

application schematic). The supply side of the bias network should be well

bypassed.

GND

Same as Pin 2.

Application Schematic for Operation at 850 MHz

Recommended Bias Resistor Values

Supply Voltage(Vs)

12V

15V

Rbias (Ohms)

@ 65 mA

110

160

1uF

68pF

Rbias

Rbias (Ohms)

@ 80 mA

130

33nH

50 ohm

microstrip

100pF

Application Schematic for Operation at 1950 MHz

1uF

22pF

Rbias

22nH

68pF

50 ohm

microstrip

68pF

522 Almanor Ave., Sunnyvale, CA 94085

Phone: (800) SMI-MMIC

http://www.stanfordmicro.com

EDS-101397 Rev A

1 2 345 6

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