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SN75207BNE4 PDF预览

SN75207BNE4

更新时间： 2024-01-05 18:20:39
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德州仪器 - TI 存储放大器
页数 文件大小 规格书
12页 363K
描述
DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS

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SN75207BNE4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DIP
包装说明：DIP, DIP14,.3针数：14
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.62
其他特性：ADDITIONAL COMMON STROBE INPUT差分输出：NO
输入特性：DIFFERENTIAL接口集成电路类型：LINE RECEIVER
接口标准：GENERAL PURPOSEJESD-30 代码：R-PDIP-T14
JESD-609代码：e4长度：19.305 mm
标称负供电电压：-5 V功能数量：2
端子数量：14最高工作温度：70 °C
最低工作温度：最大输出低电流：0.016 A
封装主体材料：PLASTIC/EPOXY封装代码：DIP
封装等效代码：DIP14,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：+-5 V认证状态：Not Qualified
最大接收延迟：35 ns接收器位数：2
座面最大高度：5.08 mm子类别：Line Driver or Receivers
最大压摆率：30 mA最大供电电压：5.25 V
最小供电电压：4.75 V标称供电电压：5 V
表面贴装：NO技术：BIPOLAR
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.62 mmBase Number Matches：1

SN75207BNE4 数据手册

 浏览型号SN75207BNE4的Datasheet PDF文件第2页浏览型号SN75207BNE4的Datasheet PDF文件第3页浏览型号SN75207BNE4的Datasheet PDF文件第4页浏览型号SN75207BNE4的Datasheet PDF文件第5页浏览型号SN75207BNE4的Datasheet PDF文件第6页浏览型号SN75207BNE4的Datasheet PDF文件第7页 
SN75207B  
DUAL SENSE AMPLIFIER FOR MOS MEMORIES  
OR DUAL HIGH-SENSITIVITY LINE RECEIVERS  
SLLS096C – JULY 1973 – REVISED MARCH 1997  
N PACKAGE  
(TOP VIEW)  
Plug-In Replacement for SN75107A and  
SN75107B With Improved Characteristics  
±10-mV Input Sensitivity  
1A  
1B  
NC  
1Y  
1G  
S
V
V
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
CC+  
TTL-Compatible Circuitry  
CC–  
Standard Supply Voltages . . . ±5 V  
2A  
2B  
NC  
2Y  
2G  
Differential Input Common-Mode Voltage  
Range of ±3 V  
Strobe Inputs for Channel Selection  
Totem-Pole Outputs  
GND  
8
SN75207B Has Diode-Protected Input Stage  
for Power-Off Condition  
NC – No internal connection  
Sense Amplifier for MOS Memories  
Dual Comparator  
High-Sensitivity Line Receiver  
description  
The SN75207B is a terminal-for-terminal replacement for the SN75107B. The improved input sensitivity makes  
it more suitable for MOS memory sense amplifiers and can result in faster memory cycles. Improved sensitivity  
also makes it more useful in line-receiver applications by allowing use of longer transmission line lengths. The  
SN75207B features a TTL-compatible, active-pullup output.  
Input protection diodes are in series with the collectors of the differential-input transistors of the SN75207B.  
These diodes are useful in certain party-line systems that may have multiple V  
power supplies and may be  
CC+  
operated with some of the V  
supplies turned off. In such a system, if a supply is turned off and allowed to  
CC+  
go to ground, the equivalent input circuit connected to that supply would be as follows:  
Input  
SN75207B  
This would be a problem in specific systems that might have the transmission lines biased to some potential  
greater than 1.4 V.  
This device is characterized for operation from 0°C to 70°C.  
FUNCTION TABLE  
STROBES  
DIFFERENTIAL INPUTS  
A–B  
OUTPUT  
Y
G
X
X
L
S
X
L
V
ID  
≥ 10 mV  
H
H
–10 mV < V < 10 mV  
ID  
X
H
L
H
H
X
L
Indeterminate  
H
H
L
V
ID  
≤ –10 mV  
X
H
H
H = high level, L = low level, X = irrelevant  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...12

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