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SN75207BNSRE4 PDF预览

SN75207BNSRE4

更新时间: 2024-01-08 22:09:33
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德州仪器 - TI 存储放大器
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12页 363K
描述
DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS

SN75207BNSRE4 数据手册

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SN75207B  
DUAL SENSE AMPLIFIER FOR MOS MEMORIES  
OR DUAL HIGH-SENSITIVITY LINE RECEIVERS  
SLLS096C – JULY 1973 – REVISED MARCH 1997  
N PACKAGE  
(TOP VIEW)  
Plug-In Replacement for SN75107A and  
SN75107B With Improved Characteristics  
±10-mV Input Sensitivity  
1A  
1B  
NC  
1Y  
1G  
S
V
V
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
CC+  
TTL-Compatible Circuitry  
CC–  
Standard Supply Voltages . . . ±5 V  
2A  
2B  
NC  
2Y  
2G  
Differential Input Common-Mode Voltage  
Range of ±3 V  
Strobe Inputs for Channel Selection  
Totem-Pole Outputs  
GND  
8
SN75207B Has Diode-Protected Input Stage  
for Power-Off Condition  
NC – No internal connection  
Sense Amplifier for MOS Memories  
Dual Comparator  
High-Sensitivity Line Receiver  
description  
The SN75207B is a terminal-for-terminal replacement for the SN75107B. The improved input sensitivity makes  
it more suitable for MOS memory sense amplifiers and can result in faster memory cycles. Improved sensitivity  
also makes it more useful in line-receiver applications by allowing use of longer transmission line lengths. The  
SN75207B features a TTL-compatible, active-pullup output.  
Input protection diodes are in series with the collectors of the differential-input transistors of the SN75207B.  
These diodes are useful in certain party-line systems that may have multiple V  
power supplies and may be  
CC+  
operated with some of the V  
supplies turned off. In such a system, if a supply is turned off and allowed to  
CC+  
go to ground, the equivalent input circuit connected to that supply would be as follows:  
Input  
SN75207B  
This would be a problem in specific systems that might have the transmission lines biased to some potential  
greater than 1.4 V.  
This device is characterized for operation from 0°C to 70°C.  
FUNCTION TABLE  
STROBES  
DIFFERENTIAL INPUTS  
A–B  
OUTPUT  
Y
G
X
X
L
S
X
L
V
ID  
10 mV  
H
H
10 mV < V < 10 mV  
ID  
X
H
L
H
H
X
L
Indeterminate  
H
H
L
V
ID  
–10 mV  
X
H
H
H = high level, L = low level, X = irrelevant  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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