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SN74CB3Q3306APWE4 PDF预览

SN74CB3Q3306APWE4

更新时间： 2024-12-01 15:52:11
品牌 Logo 应用领域
德州仪器 - TI 驱动光电二极管输出元件逻辑集成电路
页数 文件大小 规格书
15页 784K
描述
CB3Q/3VH/3C/2B SERIES, DUAL 1-BIT DRIVER, TRUE OUTPUT, PDSO8, GREEN, PLASTIC, TSSOP-8

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SN74CB3Q3306APWE4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：GREEN, PLASTIC, TSSOP-8针数：8
Reach Compliance Code：unknownHTS代码：8542.39.00.01
风险等级：5.46Is Samacsys：N
系列：CB3Q/3VH/3C/2BJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.4 mm
逻辑集成电路类型：BUS DRIVER湿度敏感等级：1
位数：1功能数量：2
端口数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：260
电源：2.5/3.3 V传播延迟（tpd）：0.2 ns
认证状态：Not Qualified座面最大高度：1.2 mm
子类别：Bus Driver/Transceivers最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.65 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3 mmBase Number Matches：1

SN74CB3Q3306APWE4 数据手册

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SN74CB3Q3306A  
www.ti.com  
SCDS113E –DECEMBER 2002–REVISED JANUARY 2011  
Dual FET Bus Switch 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch  
Check for Samples: SN74CB3Q3306A  
1
FEATURES  
•
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
•
High-Bandwidth Data Path (up to 500 MHz(1))  
•
•
•
Low Power Consumption (ICC = 0.25 mA Typ)  
VCC Operating Range From 2.3 V to 3.6 V  
•
5-V-Tolerant I/Os With Device Powered Up or  
Powered Down  
•
•
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 4 Ω Typ)  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
•
•
•
•
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Rail-to-Rail Switching on Data I/O Ports  
–
–
0- to 5-V Switching With 3.3-V VCC  
0- to 3.3-V Switching With 2.5-V VCC  
Ioff Supports Partial-Power-Down Mode  
Operation  
Latch-Up Performance Exceeds 100 mA  
Per JESD 78, Class II  
•
•
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
ESD Performance Tested Per JESD 22  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 3.5 pF Typ)  
–
2000-V Human-Body Model  
(A114-B, Class II)  
•
Fast Switching Frequency (f OE = 20 MHz Max)  
–
1000-V Charged-Device Model (C101)  
(1)  
•
Supports Both Digital and Analog  
Applications: USB Interface, Differential Signal  
Interface, Bus Isolation, Low-Distortion Signal  
Gating  
For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI application  
report, CBT-C, CB3T, and CB3Q Signal-Switch Families,  
literature number SCDA008.  
PW PACKAGE  
(TOP VIEW)  
DCU PACKAGE  
(TOP VIEW)  
1OE  
1A  
1B  
VCC  
2OE  
2B  
1
2
3
4
8
7
6
5
1
2
3
4
8
7
6
5
1OE  
1A  
VCC  
2OE  
2B  
1B  
GND  
GND  
2A  
2A  
ORDERING INFORMATION  
TA  
PACKAGE(1)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
Tube  
SN74CB3Q3306APW  
TSSOP – PW  
US8-DCU  
BU306A  
Tape and reel  
SN74CB3Q3306APWR  
–40°C to 85°C  
SN74CB3Q3306ADCUR  
74CB3Q3306ADCURE4  
Tape and reel  
GA6R(2)  
(1) Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
(2) The last character designates assembly/test site.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2002–2011, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
 
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