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SMP7.0A-M3/85A PDF预览

SMP7.0A-M3/85A

更新时间: 2024-11-19 20:49:31
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管电视
页数 文件大小 规格书
5页 96K
描述
DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2, Transient Suppressor

SMP7.0A-M3/85A 技术参数

生命周期:Active零件包装代码:DO-220AA
包装说明:R-PDSO-F2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.79
最大击穿电压:8.6 V最小击穿电压:7.78 V
击穿电压标称值:8.19 V外壳连接:CATHODE
最大钳位电压:12 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-220AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:7 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

SMP7.0A-M3/85A 数据手册

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SMP3V3 thru SMP36A  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
eSMP® Series  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Available in uni-directional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform  
• Excellent clamping capability  
• Very fast response time  
DO-220AA (SMP)  
• Low incremental surge resistance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
PRIMARY CHARACTERISTICS  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
VBR uni-directional  
4.10 V to 44.2 V  
VWM  
3.3 V to 36 V  
400 W  
PPPM  
MECHANICAL DATA  
IFSM  
40 A  
Case: DO-220AA (SMP)  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
Polarity  
Package  
150 °C  
Uni-directional  
DO-220AA (SMP)  
Base P/N-M3  
-
halogen-free, RoHS-compliant, and  
commercial grade  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TYPICAL APPLICATIONS  
M3 suffix meets JESD 201 class 2 whisker test  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1) (1)(2)  
Peak pulse current with a 10/1000 μs waveform (1)  
Peak forward surge current 10 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A (3)  
PPPM  
IPPM  
IFSM  
VF  
400  
W
A
A
V
See table next page  
40  
2.5  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
Pulse test: 300 μs pulse width, 1 % duty cycle  
(2)  
(3)  
Revision: 10-Dec-13  
Document Number: 88481  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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