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SMP7N60 PDF预览

SMP7N60

更新时间: 2024-11-19 19:15:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
1页 155K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SMP7N60 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.8配置:Single
最大漏极电流 (Abs) (ID):7 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

SMP7N60 数据手册

  

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