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SMDJ350A PDF预览

SMDJ350A

更新时间: 2024-11-14 13:45:15
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管瞬态抑制器
页数 文件大小 规格书
5页 190K
描述
功能与特色:

SMDJ350A 数据手册

 浏览型号SMDJ350A的Datasheet PDF文件第2页浏览型号SMDJ350A的Datasheet PDF文件第3页浏览型号SMDJ350A的Datasheet PDF文件第4页浏览型号SMDJ350A的Datasheet PDF文件第5页 
TransientVoltage Suppression Diodes  
Surface Mount – 3000W > SMDJ series  
RoHS  
SMDJ Series  
Description  
The SMDJ series is designed specifically to protect  
sensitive electronic equipment from voltage transients  
induced by lightning and other transient voltage events.  
Features  
tꢀ)BMPHFOꢁ'SFF  
tꢀ 3P)4ꢀDPNQMJBOU  
tꢀ 'PSꢀTVSGBDFꢀNPVOUFEꢀ  
applications in order to  
optimize board space  
tꢀ 'BTUꢀSFTQPOTFꢀUJNFꢄꢀ  
typically less than 1.0ps  
from 0V to BV min  
tꢀ &YDFMMFOUꢀDMBNQJOHꢀ  
capability  
tꢀ -PXꢀJODSFNFOUBMꢀTVSHFꢀ  
resistance  
tꢀ 5ZQJDBMꢀ*R less than 2μA  
above 12V  
tꢀ )JHI5FNQFSBUVSFꢀ  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
tꢀ 1MBTUJDꢀQBDLBHFꢀIBTꢀ  
Underwriters Laboratory  
Flammability 94V-O  
Agency Approvals  
tꢀ -PXꢀQSPmMFꢀQBDLBHF  
tꢀ #VJMUꢁJOꢀTUSBJOꢀSFMJFG  
tꢀ 5ZQJDBMꢀNBYJNVNꢀ  
temperature coefficient  
ΔVBR = 0.1% x VBR@25°C x ΔT  
AGENCY  
AGENCY FILE NUMBER  
E230531  
tꢀ (MBTTꢀQBTTJWBUFEꢀDIJQꢀ  
junction  
tꢀ ꢂꢃꢃꢃ8ꢀQFBLꢀQVMTFꢀQPXFSꢀ  
capability at 10×1000ꢀs  
waveform, repetition rate  
(duty cycles):0.01%  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
Parameter  
Symbol  
PPPM  
Value  
3000  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10x1000μs waveform  
(Fig.1)(Note 1), (Note 2)  
tꢀ .BUUF5JOꢀ-FBEoGSFFꢀ1MBUFE  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
Applications  
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
300  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
V
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
Computer, Industrial and Consumer electronic applications.  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
T , TSTG -65 to 150  
°C  
J
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
TypicalThermal Resistance Junction  
to Ambient  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
©2009 Littelfuse, Inc.  
53  
Revision: January 09, 2009  
SMDJ Series  
Specifications are subject to change without notice.  
Please refer to http://www.Littelfuse.com/series/SMDJ.html for current information.  

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Trans Voltage Suppressor Diode, 3000W, Unidirectional, 1 Element, Silicon, DO-214AB