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SMD10P05 PDF预览

SMD10P05

更新时间: 2024-11-23 20:03:55
品牌 Logo 应用领域
TEMIC 脉冲晶体管
页数 文件大小 规格书
4页 120K
描述
Power Field-Effect Transistor, 10A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

SMD10P05 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.71外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:50 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

SMD10P05 数据手册

 浏览型号SMD10P05的Datasheet PDF文件第2页浏览型号SMD10P05的Datasheet PDF文件第3页浏览型号SMD10P05的Datasheet PDF文件第4页 

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