Datasheet > SMD10P06L

SMD10P06L

更新时间： 2024-02-06 12:44:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	63K
描述
Transistor,

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技术参数
数据手册

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SMD10P06L 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.71	配置：	SINGLE
最小漏源击穿电压：	60 V	最大漏极电流 (ID)：	10 A
最大漏源导通电阻：	0.028 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管元件材料：	SILICON
Base Number Matches：	1

SMD10P06L 数据手册

SMD10P06L

P-Channel Enhancement-Mode Transistor

Product Summary

V_DS(V)

r_DS(on)(W)

I_D^a(A)

0.28 @ V = –10 V

–10

–60

0.35 @ V = –4.5 V

–7.5

DPAK (TO-252)

Top View

P-Channel MOSFET

Absolute Maximum Ratings (T_C= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–60

"20

–2.0

–1.2

–16

= 25_C

Continuous Drain Current

= 100_C

Pulsed Drain Current (maximum current limited by package)

= 25_C

Maximum Power Dissipation

2.0

Operating Junction and Storage Temperature Range

T , T

–55 to 175

stg

Thermal Resistance Ratings

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambient Free Air

thJA

_C/W

Junction-to-Case

2.3

3.0

thJC

Notes:

a. Calculated Rating for T = 25_C, for comparison purposes only. This cannot be used as continuous rating (see Absolute Maximum Ratings

and Typical Characteristics).

b. Surface mounted on PC board or mounted vertically in free air.

Subsequent updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document

#1405.

Siliconix

P-38650—Rev. B, 06-Jun-94

12 3 4

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