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SMD10P06 PDF预览

SMD10P06

更新时间: 2024-11-23 19:12:27
品牌 Logo 应用领域
TEMIC /
页数 文件大小 规格书
1页 80K
描述
Power Field-Effect Transistor, 10A I(D), 60V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,

SMD10P06 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.7配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (ID):10 A
最大漏源导通电阻:0.028 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

SMD10P06 数据手册

  

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