Datasheet > SMCJ6.5A-E3/57T

SMCJ6.5A-E3/57T

更新时间： 2024-11-13 19:27:19

品牌	Logo	应用领域
威世 - VISHAY		局域网光电二极管电视
页数	文件大小	规格书
5页	96K
描述
DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMCJ6.5A-E3/57T 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AB
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	1.27
Is Samacsys：	N	其他特性：	UL RECOGNIZED; EXCELLENT CLAMPING CAPABILITY
最大击穿电压：	7.98 V	最小击穿电压：	7.22 V
击穿电压标称值：	7.6 V	最大钳位电压：	11.2 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AB
JESD-30 代码：	R-PDSO-C2	JESD-609代码：	e3
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	1500 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL	最大功率耗散：	6.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	6.5 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子面层：	Matte Tin (Sn)
端子形式：	C BEND	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

SMCJ6.5A-E3/57T 数据手册

SMCJ5.0A thru SMCJ188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

Available

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMC (DO-214AB)

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHE3 or P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_BRuni-directional

6.40 V to 231 V

TYPICAL APPLICATIONS

V_BRbi-directional

6.40 V to 231 V

5.0 V to 188 V

1500 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

V_WM

P_PPM

P_D

6.5 W

I_FSM(uni-directional only)

200 A

MECHANICAL DATA

T_Jmax.

150 °C

Case: SMC (DO-214AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, commercial

grade

Polarity

Uni-directional, bi-directional

SMC (DO-214AB)

Package

Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified

Base P/NHM3

- halogen-free, RoHS-compliant, and

AEC-Q101 qualified

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMCJ188CA).

Electrical characteristics apply in both directions.

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3, M3, HE3, and HM3 suffix meets JESD 201 class 2

whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

1500

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Power dissipation on infinite heatsink, T_A= 50 °C

I_PPM

See next table

200

(2)

I_FSM

P_D

6.5

Operating junction and storage temperature range

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2.

Mounted on 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pads to each terminal

(2)

Revision: 14-Jul-17

Document Number: 88394

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SMCJ6.5A-E3/57T相关器件

型号	品牌	获取价格	描述	数据表
SMCJ6.5A-E3/9AT	VISHAY	获取价格	TVS DIODE 6.5V 11.2V DO214AB
SMCJ6.5AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ6.5AE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ6.5A-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ6.5A-H	YINT	获取价格	Automotive and High Reliability TVS Diodes
SMCJ6.5AHE3/57T	VISHAY	获取价格	DIODE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ,
SMCJ6.5AHE3/9AT	VISHAY	获取价格	TVS DIODE 6.5V 11.2V DO214AB
SMCJ6.5A-HR	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMCJ6.5A-HRA	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode
SMCJ6.5A-HRAT7	LITTELFUSE	获取价格	TVS DIODE 6.5V 11.2V DO214AB

与SMCJ6.5A-E3/57T相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

26
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

SMCJ6.5A-E3/57T

SMCJ6.5A-E3/57T 技术参数

SMCJ6.5A-E3/57T 数据手册

与SMCJ6.5A-E3/57T相关器件

与SMCJ6.5A-E3/57T相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMCJ6.5A-E3/57T

SMCJ6.5A-E3/57T 技术参数

SMCJ6.5A-E3/57T 数据手册

与SMCJ6.5A-E3/57T相关器件

与SMCJ6.5A-E3/57T相关文章

您还可以找

您在本页遇到什么问题？