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SMCJ6.5A-HR

更新时间： 2024-11-13 21:01:47
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网光电二极管
页数 文件大小 规格书
6页 980K
描述
Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

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SMCJ6.5A-HR 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PDSO-J2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.6其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：7.98 V最小击穿电压：7.22 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-J2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL最大功率耗散：6.5 W
最大重复峰值反向电压：6.5 V表面贴装：YES
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：J BEND端子位置：DUAL
处于峰值回流温度下的最长时间：40Base Number Matches：1

SMCJ6.5A-HR 数据手册

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TVS Diodes  
Surface Mount – 1500W > SMCJ-HR Series  
RoHS  
Pb e3  
SMCJ-HR Series  
Description  
Uni-directional  
The SMCJ-HR High Reliability series is designed  
specifically to protect sensitive electronic equipment from  
voltage transients induced by lightning and other transient  
voltage events.  
Bi-directional  
Agency Approvals  
Features  
• 1500W peak pulse power • Typical IR less than 1µA  
AGENCY  
AGENCY FILE NUMBER  
E230531  
capability at 10/1000μs  
waveform, repetition rate  
(duty cycles):0.01%  
• For surface mounted  
applications in order to  
optimize board space  
above 12V  
• HighTemperature  
soldering guaranteed:  
260°C/40 seconds at  
terminals  
• Plastic package is  
flammability rated V-0 per  
UL 94  
Maximum Ratings andThermal Characteristics  
(TA=25OC unless otherwise noted)  
• Low profile package  
• Built-in strain relief  
Parameter  
Symbol  
PPPM  
Value  
1500  
Unit  
W
Peak Pulse Power Dissipation at  
TA=25ºC by 10/1000µs waveform  
(Fig.1)(Note 1), (Note 2)  
• Meet MSL level1, per  
J-STD-020, LF maximun  
peak of 260°C  
• Matte tin lead–free plated  
• Halogen free and RoHS  
compliant  
• Pb-free E3 means 2nd  
level interconnect is Pb-  
free and the terminal finish  
material is tin(Sn) (IPC/  
JEDEC J-STD-609A.01)  
• VBR @TJ= VBR@25°C  
x (1+αT x (TJ - 25))  
(αT:Temperature  
Coefficient, typical value  
is 0.1%)  
• Glass passivated chip  
junction  
• Fast response time:  
typically less than 1.0ps  
from 0V to BV min  
Power Dissipation on infinite heat  
sink atTA=50OC  
PM(AV)  
IFSM  
6.5  
W
A
Peak Forward Surge Current, 8.3ms  
Single Half Sine Wave (Note 3)  
200  
Maximum Instantaneous Forward  
Voltage at 100A for Unidirectional  
only  
VF  
3.5  
V
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -65 to 150  
°C  
• Excellent clamping  
capability  
TypicalThermal Resistance Junction  
to Lead  
RuJL  
RuJA  
15  
75  
°C/W  
°C/W  
• Low incremental surge  
resistance  
TypicalThermal Resistance Junction  
to Ambient  
Applications  
Notes:  
1. Non-repetitive current pulse , per Fig. 3 and derated aboveTA = 25OC per Fig. 2.  
TVS devices are ideal for the protection of I/O Interfaces,  
CC bus and other vulnerable circuits used inTelecom,  
Computer, Industrial and Consumer electronic applications.  
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.  
V
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional  
device only, duty cycle=4 per minute maximum.  
Functional Diagram  
Bi-directional  
Cathode  
Anode  
Uni-directional  
© 2016 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: 11/10/16  
123456

中文翻译

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SMCJ6.5A-HR 替代型号

型号 品牌 替代类型 描述 数据表
SMCJ6.5A LITTELFUSE

完全替代

 Silicon Avalanche Diodes - 1500W Surface Mount Transient Voltage Supressors
SMCJ6.5A-HRAT7 LITTELFUSE

功能相似

 TVS DIODE 6.5V 11.2V DO214AB
SMCJ6.5A-HRA LITTELFUSE

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