Datasheet > SMCG11CA-HRA

SMCG11CA-HRA

更新时间： 2024-02-19 10:00:20

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
6页	832K
描述
TVS DIODE 11V 18.2V DO215AB

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中文翻译

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数据手册

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SMCG11CA-HRA 数据手册

TVS Diode

Surface Mount – 1500W > SMCG-HRA series

Pb e3

RoHS

SMCG-HRA Series

Description

The SMCG-HRA series is designed speciﬁcally to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

• High-Reliability up-

screened for critical

applications require higher

reliability performance

and low infant mortality

failures.

• Built-in strain relief

• Fast response time:

typically less than 1.0ps

from 0V to V_BRmin

• 1500W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

Agency Approvals

• Excellent clamping

capability

Agency

Agency File Number

E230531

• Low incremental surge

resistance

• Typical I_Rless than 1μA

when V_BRmin>12V

• V_BR@T_J= V_BR@25°C x (1+αT

x (T_J- 25)) (αT:Temperature

Coefﬁcient, typical value is

0.1%)

• Surface mount component • Glass passivated chip

to optimize board space junction

• L bend lead forming gives • High temperature

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

best solderbility for High

reliability application

•Typical failure mode is

short from over-speciﬁed

voltage or current

soldering guaranteed:

260°C/10 seconds at

terminals

• Meet MSL level1, per

J-STD-020

Parameter

Symbol

P_PPM

P_M(AV)

I_FSM

Value

1500

6.5

Unit

Peak Pulse Power Dissipation (IPP x VC)by

10/1000µs waveform (Fig.2)(Note 1), (Note 2)

Power Dissipation on inﬁnite heat sink at

T_A=50^OC

• Whisker test is conducted • Matte tin lead–free plated

based on JEDEC

Peak Forward Surge Current, 8.3ms Single

Half Sine Wave (Note 3)

200

• Halogen free

JESD201A per its table 4a

• RoHS compliant with

Maximum Instantaneous Forward Voltage at

100A for Unidirectional only

V_F

3.5

and 4c

exemption 7a and 7c-I

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Operating Junction and StorageTemperature

Range

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• EFT protection of data

lines in accordance with

IEC 61000-4-4

T_J, T_STG-65 to 150

°C

TypicalThermal Resistance Junction to Lead

R_ƟJL

R_ƟJA

°C/W

TypicalThermal Resistance Junction to

Ambient

Notes:

1. Non-repetitive current pulse per Fig. 4 and derated above T_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional component only, duty

cycle=4 per minute maximum.

Functional Diagram

Applications

TVS components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer electronic

applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/22/20

12 3 4 5 6

中文翻译

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与SMCG11CA-HRA相关器件

型号	品牌	获取价格	描述	数据表
SMCG11CATR	MICROSEMI	获取价格	暂无描述
SMCG11CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional
SMCG11CE3	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMCG11C-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG11C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG11C-E3/57T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
SMCG11C-E3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
SMCG11CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCG11CE3TR	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
SMCG11CHE3/57T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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