Datasheet > SMCG11CATRE3

SMCG11CATRE3

更新时间： 2024-02-03 08:50:28

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
4页	235K
描述
Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional

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技术参数
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SMCG11CATRE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.8	击穿电压标称值：	12.85 V
最大钳位电压：	18.2 V	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e3	湿度敏感等级：	1
峰值回流温度（摄氏度）：	260	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	11 V	子类别：	Transient Suppressors
表面贴装：	YES	端子面层：	MATTE TIN
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

SMCG11CATRE3 数据手册

SMCJ5.0 thru SMCJ170CA, e3

and SMCG5.0 thru SMCG170CA, e3

SURFACE MOUNT 1500 Watt

Transient Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

The SMCJ5.0-170A or SMCG5.0-170A series of 1500 W Transient Voltage

Suppressors (TVSs) protects a variety of voltage-sensitive components. It is

available in J-bend design (SMCJ) with the DO-214AB package for greater PC

board mounting density or in a Gull-wing design (SMCG) in the DO-215AB for

visible solder connections. Selections include unidirectional and bidirectional

as well as RoHS Compliant with an e3 suffix. They can protect from secondary

lightning effects per IEC61000-4-5 and class levels defined herein, or for

inductive switching environments and induced RF protection. Since their

response time is virtually instantaneous, they can also be used in protection

from ESD and EFT per IEC61000-4-2 and IEC61000-4-4.

NOTE: All SMC series are

equivalent to prior SMM package

identifications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical surface mount design in both J-bend or

Gull-wing terminations

•

Selections for 5.0 to 170 volts standoff voltages (V_WM

)

Protection from switching transients and induced RF

Available in both Unidirectional and Bidirectional

construction with a C or CA suffix

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_BR

I_D(in the operating direction for unidirectional or both

directions for bidirectional)

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: SMC 5.0 to SMC 170A or CA

Class 2: SMC 5.0 to SMC 150A or CA

Class 3: SMC 5.0 to SMC 75A or CA

Class 4: SMC 5.0 to SMC 36A or CA

•

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1 : SMC 5.0 to SMC 90A or CA

Class 2: SMC 5.0 to SMC 45A or CA

Class 3: SMC 5.0 to SMC 24A or CA

Class 4: SMC 5.0 to SMC 11A or CA

Axial-lead equivalent packages for thru-hole mounting

available as 1.5KE6.8 to 1.5KE200CA or 1N6267 thru

1N6303A and 1N5908 (consult factory for other

surface mount options)

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: SMC 5.0 to SMC 22A or CA

Class 3: SMC 5.0 to SMC 10A or CA

•

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 1500 watts at

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

10/1000 μs (also see Fig 1,2, and 3)

•

Impulse repetition rate (duty factor): 0.01%

TERMINALS: Gull-wing or C-bend (modified J-bend)

leads, tin-lead or RoHS compliant annealed matte-tin

plating solderable to MIL-STD-750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 20^ºC/W junction to lead, or 80^ºC/W

junction to ambient when mounted on FR4 PC board

(1oz Cu) with recommended footprint (see last page)

Steady-State Power dissipation: 6 watts at T_L= 30^oC,

or 1.56 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

•

POLARITY: Cathode indicated by band. No marking

on bi-directional devices

•

MARKING: Part number without “SM” prefix (e.g.

C5.0, C5.0A, C5.0CA, MXC5.0A, 5.0Ae3, C5.0CAe3,

C36, C36A, C36CA, MAC36CA, 36CAe3, etc.)

•

TAPE & REEL option: Standard per EIA-481-2 with

16 mm tape, 750 per 7 inch reel or 2500 per 13 inch

reel (add “TR” suffix to part number)

•

Forward Surge: 200 Amps peak impulse of 8.3 ms

half-sine wave at 25ºC (unidirectional only)

Solder temperatures: 260 ^ºC for 10 s (maximum)

WEIGHT: 0.25 grams

8-04-05 REV D

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SMCG11CATRE3相关器件

型号	品牌	获取价格	描述	数据表
SMCG11CE3	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMCG11C-E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG11C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMCG11C-E3/57T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
SMCG11C-E3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional,
SMCG11CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCG11CE3TR	MICROSEMI	获取价格	1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB, ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
SMCG11CHE3/57T	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCG11CHE3/9AT	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 11V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMCG11CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 11V V(RWM), Bidirectional

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