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SMC9-65608EV-30 PDF预览

SMC9-65608EV-30

更新时间: 2024-11-03 06:48:59
品牌 Logo 应用领域
TEMIC 静态存储器
页数 文件大小 规格书
10页 159K
描述
Standard SRAM, 128KX8, 30ns, CMOS, 0.400 INCH, SIDE BRAZED, DIP-32

SMC9-65608EV-30 数据手册

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M65608E  
128 K 8 Very Low Power CMOS SRAM Rad Tolerant  
Introduction  
The M65608E is a very low power CMOS static RAM  
organized as 131072 × 8 bits.  
supply current (Typical value = 0.2 µA) with a fast  
access time at 30 ns over the full military temperature  
range. The high stability of the 6T cell provides  
excellent protection against soft errors due to noise.  
TEMIC brings the solution to applications where fast  
computing is as mandatory as low consumption, such as  
aerospace electronics, portable instruments, or  
embarked systems.  
The M65608E is processed according to the methods of  
the latest revision of the MIL STD 883 (class B or S),  
ESA SCC 9000 or QML.  
Utilizing an array of six transistors (6T) memory cells,  
the M65608E combines an extremely low standby  
Features  
D Access time: 30, 45 ns  
D TTL compatible inputs and outputs  
D Asynchronous  
D Very low power consumption  
active : 250 mW (Typ)  
standby : 1 µW (Typ)  
data retention : 0.5 µW (Typ)  
D Wide temperature Range : –55 To +125°C  
D 400 Mils width package  
D Single 5 volt supply  
D Equal cycle and access time  
D Gated inputs :  
no pull-up/down  
resistors are required  
Interface  
Block Diagram  
Rev. E – June 5, 2000  
1

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