是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-214AA | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.57 | 其他特性: | EXCELLENT CLAMPING CAPABILITY, LOW INDUCTANCE, UL RECOGNIZED |
最大击穿电压: | 18.9 V | 最小击穿电压: | 17.1 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e0 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 240 | 极性: | UNIDIRECTIONAL |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 15.3 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | TIN LEAD | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE18AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18AHE3 | MCC |
获取价格 |
Tape&Reel: 3Kpcs/Reel; | |
SMBJP6KE18AP | MCC |
获取价格 |
DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress | |
SMBJP6KE18AQ | MCC |
获取价格 |
Tape :3K/Reel, 48K/Ctn; | |
SMBJP6KE18A-TP | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18A-TP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
SMBJP6KE18CA | MCC |
获取价格 |
Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt | |
SMBJP6KE18CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 15.3V V(RWM), Bidirectional, 1 Element, Silicon, DO- |